Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 3/20 | 0.32 |
| ▸ | CA2 | P00918 | 3/20 | 0.32 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | POLB | P06746 | 1/20 | 0.32 |
| ▸ | ELANE | P08246 | 1/20 | 0.32 |
| ▸ | CTSL | P07711 | 2/20 | 0.31 |
| ▸ | CTSB | P07858 | 2/20 | 0.31 |
| ▸ | CTSK | P43235 | 2/20 | 0.31 |
| ▸ | NFKB1 | P19838 | 2/20 | 0.31 |
| ▸ | CDK4 | P11802 | 1/20 | 0.31 |
| ▸ | CCND1 | P24385 | 1/20 | 0.31 |
| ▸ | JUN | P05412 | 1/20 | 0.31 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.31 |
| ▸ | TRIM24 | O15164 | 1/20 | 0.30 |
| ▸ | TRIM33 | Q9UPN9 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7269137 | 0.99 | LMNA (0.34) | MAPTLMNAHDAC4CA1CA2 | |
| Styrene SCHEMBL6858832 | 0.94 | MEN1 (0.32) | MAPTLMNAHDAC4CA1CA2 | |
| SCHEMBL6858336 | 0.90 | — | — | |
| SCHEMBL2776503 | 0.89 | — | — | |
| SCHEMBL28601849 | 0.89 | CNR1 (0.36) | MAPTLMNAMEN1KMT2A | |
| SCHEMBL6859864 | 0.88 | KMT2A (0.35) | MAPTMEN1KMT2AALDH1A1CTSL | |
| Indene SCHEMBL6834156 | 0.88 | CYP2D6 (0.32) | — | |
| SCHEMBL7251880 | 0.88 | KDM4E (0.30) | KDM4E | |
| SCHEMBL7251835 | 0.87 | CTSK (0.42) | MAPTLMNAMEN1KMT2AALDH1A1 | |
| SCHEMBL6367955 | 0.87 | ADORA3 (0.30) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9310683-B2 | Monomer, polymer, positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-12 | — | — | US | disclosed |
| US-9075308-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-07-07 | — | — | US | disclosed |
| US-9017918-B2 | Monomer, polymer, chemically amplified positive resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-04-28 | — | — | US | disclosed |
| US-8841061-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-23 | — | — | US | disclosed |
| US-8808966-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-19 | — | — | US | disclosed |
| US-20140045122-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-02-13 | — | — | US | disclosed |
| US-8574817-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| US-20130288180-A1 | MONOMER, POLYMER, POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-10-31 | — | — | US | disclosed |
| US-8450042-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20130084529-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20070148584-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-28 | — | — | US | disclosed |
| US-20050271978-A1 | Resist polymer, making method, and chemically amplified positive resist composition | SHIN-ETSU CHEMICAL CO., LTD. | 2005-12-08 | — | — | US | disclosed |
| US-6835804-B2 | Effecting deblocking reaction on an addition polymer in presence of acid catalyst | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-28 | — | — | US | disclosed |
| US-6746817-B2 | ACID LABILE GROUPS INCREASE ALKALI SOLUBILITY; HAVING INCREASED ALKALI DISSOLUTION RATE BEFORE AND AFTER RADIATION EXPOSURE, HIGH SENSITIVITY, HIGH RESOLUTION, AND ETCHING RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-06-08 | — | — | US | disclosed |
| US-6653044-B2 | Addition copolymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-25 | — | — | US | disclosed |
| US-20020111459-A1 | Preparation of polymer, and resist composition using the polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-15 | — | — | US | disclosed |
| US-20020081521-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-06-27 | — | — | US | disclosed |
| US-20020039701-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-04 | — | — | US | disclosed |
| US-20010036593-A1 | Chemical amplification type resist composition | SHIN-ETSU CHEMICAL CO., LTD. | 2001-11-01 | — | — | US | disclosed |
| US-6156481-A | WITH HYDROXYSTYRENE-(METH)ACRYLIC ACID OR (METH)ACRYLATE COPOLYMER WHERE SOME PHENOLIC HYDROXYL GROUPS ARE CROSSLINKED WITH ETHER CONTAINING ACID LABILE GROUPS; DISSOLUTION INHIBITION AND INCREASED DISSOLUTION CONTRAST AFTER EXPOSURE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-12-05 | — | — | US | disclosed |