SCHEMBL2774896

SCHEMBL2774896

C=C(C)C(=O)OC1(c2ccccc2)c2ccccc2-c2ccccc21

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 1/20 0.42
THRB P10828 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
SLC6A1 P30531 1/20 0.37
ALDH1A1 P00352 3/20 0.36
MAPT P10636 3/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
KDM4E B2RXH2 1/20 0.36
HPGD P15428 1/20 0.36
GPR55 Q9Y2T6 1/20 0.36
APEX1 P27695 1/20 0.36
PDK2 Q15119 3/20 0.35
ITGA4 P13612 1/20 0.35
KIF11 P52732 1/20 0.35
OPRM1 P35372 1/20 0.34
OPRL1 P41146 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.33
CFTR P13569 1/20 0.33
GOPC Q9HD26 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9610551 0.93 ELANE (0.39) ELANETHRBTDP1SLC6A1ALDH1A1
SCHEMBL11964309 0.89 ELANE (0.35) ELANETHRBTDP1SLC6A1ALDH1A1
SCHEMBL9610344 0.84 SLC6A2 (0.38) ELANEALDH1A1MAPTMEN1KMT2A
SCHEMBL9610548 0.84 ELANE (0.39) ELANEALDH1A1MAPTMEN1KMT2A
SCHEMBL9610549 0.84 SLC6A1 (0.40) ELANESLC6A1ALDH1A1MAPTMEN1
SCHEMBL9610342 0.83 ELANE (0.34) ELANETHRBTDP1ALDH1A1MAPT
SCHEMBL9610334 0.83 ELANE (0.34) ELANETHRBTDP1ALDH1A1MAPT
SCHEMBL9610611 0.82 ELANE (0.38) ELANEOPRM1OPRL1
SCHEMBL9610607 0.82 ELANE (0.38) ELANEMEN1KMT2AOPRM1OPRL1
SCHEMBL29200195 0.82 THRB (0.38) THRBTDP1SLC6A1ALDH1A1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9869931-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-16 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9846360-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-12-19 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-9645498-B2 Developer and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-05-09 US disclosed
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-04-11 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20130029270-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-31 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120202153-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-09 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20120135349-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-05-31 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed
US-20100227274-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-09-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130089820-A1 RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS PSMB2, PSMC6, PSMB1 ELANE 2813/4885THRB 323/4885TDP1 2745/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.