SCHEMBL2783372

SCHEMBL2783372

[CH2]Oc1cccc2ccc3ccccc3c12

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 7/20 0.48
ALDH1A1 P00352 7/20 0.48
HPGD P15428 5/20 0.48
CYP1A2 P05177 4/20 0.48
THRB P10828 1/20 0.48
TSHR P16473 4/20 0.44
TDP1 Q9NUW8 2/20 0.44
CYP2A6 P11509 1/20 0.44
HPRT1 P00492 1/20 0.41
HTR1B P28222 4/20 0.40
CYP3A4 P08684 3/20 0.40
CYP1B1 Q16678 2/20 0.40
CYP1A1 P04798 1/20 0.40
HIF1A Q16665 2/20 0.39
MAPK1 P28482 2/20 0.39
ERBB2 P04626 1/20 0.39
FYN P06241 1/20 0.39
MAOA P21397 1/20 0.39
ACHE P22303 1/20 0.39
AHR P35869 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3747912 0.83 ALDH1A1 (0.52) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL95104 0.82 HTR1B (0.50) HSD17B10ALDH1A1HPGDCYP1A2TSHR
SCHEMBL20435263 0.79 MAPT (0.59) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL2778935 0.79 HPRT1 (0.58) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL6851541 0.78 ALDH1A1 (0.46) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL11047499 0.78 ALDH1A1 (0.46) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL28174861 0.77 HTR1B (0.46) HSD17B10ALDH1A1HPGDCYP1A2TSHR
SCHEMBL26445243 0.75 ALDH1A1 (0.43) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL28250584 0.75 ALDH1A1 (0.43) HSD17B10ALDH1A1HPGDCYP1A2THRB
SCHEMBL6851542 0.75 ALDH1A1 (0.43) HSD17B10ALDH1A1HPGDCYP1A2THRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10289002-B2 Electron beam resist underlayer film-forming composition containing lactone-structure-containing polymer NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-14 US disclosed
US-10042247-B2 Mask blank, method for manufacturing mask blank and transfer mask HOYA CORPORATION (JP) 2018-08-07 US disclosed
US-20170285460-A1 MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK AND TRANSFER MASK HOYA CORPORATION (JP) 2017-10-05 US disclosed
US-9645494-B2 Resist underlayer film forming composition containing low molecular weight dissolution accelerator NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-05-09 US disclosed
US-20160363863-A1 ELECTRON BEAM RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING LACTONE-STRUCTURE-CONTAINING POLYMER NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-15 US disclosed
EP-2095189-B1 COMPOSITION FOR FORMING RESIST FOUNDATION FILM CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL IND LTD (JP) 2013-07-10 EP disclosed
EP-2085823-B1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE NISSAN CHEMICAL IND LTD (JP) 2013-01-16 EP disclosed
US-7842620-B2 Method for manufacturing semiconductor device using quadruple-layer laminate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-30 US disclosed
US-20100291483-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING BRANCHED POLYHYDROXYSTYRENE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-11-18 US disclosed
US-20100075253-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LOW MOLECULAR WEIGHT DISSOLUTION ACCELERATOR NISSAN CHEMICAL INDUSTRIES , LTD. (JP) 2010-03-25 US disclosed
US-20100022089-A1 Method for manufacturing semiconductor device using quadruple-layer laminate NISSIAN CHEMICAL INDUSTRIES, LTD. (JP) 2010-01-28 US disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed