SCHEMBL278357

SCHEMBL278357

Cc1cc(Cc2cc(Cc3cc(C)c(O)c(Cc4cc(C)c(O)cc4C)c3)cc(C)c2O)c(C)cc1O

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SHBG P04278 1/20 0.65
ESR1 P03372 1/20 0.46
ESR2 Q92731 1/20 0.46
HMGB1 P09429 1/20 0.43
CXCL12 P48061 1/20 0.43
CYP2C9 P11712 3/20 0.39
CYP2C19 P33261 3/20 0.39
HIF1A Q16665 3/20 0.39
CYP2D6 P10635 2/20 0.39
HSD17B10 Q99714 2/20 0.39
ALDH1A1 P00352 2/20 0.38
KDM4E B2RXH2 2/20 0.38
MAPT P10636 2/20 0.38
CYP1A2 P05177 1/20 0.38
CYP3A4 P08684 1/20 0.38
G6PD P11413 1/20 0.38
PKM P14618 1/20 0.38
HPGD P15428 1/20 0.38
ALOX15 P16050 1/20 0.38
ALOX12 P18054 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30375057 0.96 SHBG (0.59) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL278742 0.96 SHBG (0.59) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL16247822 0.94 SHBG (0.57) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL8819971 0.90 SHBG (0.53) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL4063126 0.89 SHBG (0.48) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL14410112 0.86 SHBG (0.49) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL1057297 0.84 CYP2C9 (0.51) SHBGESR1ESR2CYP2C9CYP2C19
SCHEMBL18121261 0.83 HIF1A (0.42) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL278228 0.83 DHFR (0.43) SHBGESR1ESR2HMGB1CXCL12
SCHEMBL29713830 0.82 ALDH1A1 (0.52) SHBGESR1ESR2CYP2C9CYP2C19

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-9563121-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition FUJIFILM CORPORATION (JP) 2017-02-07 US disclosed
US-9235116-B2 Actinic-ray- or radiation sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-9235116-B2 Actinic-ray- or radiation sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-01-12 US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 US disclosed
US-8673538-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-03-18 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-8530003-B2 Polybenzoxazole precursor, photosensitive resin composition using the same, and manufacturing method of semiconductor device FUJIFILM CORPORATION (JP) 2013-09-10 US disclosed
US-8530003-B2 Polybenzoxazole precursor, photosensitive resin composition using the same, and manufacturing method of semiconductor device FUJIFILM CORPORATION (JP) 2013-09-10 US disclosed
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-7615330-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7615330-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-11-10 US disclosed
US-7534547-B2 Optically active compound and photosensitive resin composition OSAKA GAS COMPANY LIMITED (JP) 2009-05-19 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20070072117-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070072117-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
EP-1375463-A1 OPTICALLY ACTIVE COMPOUND AND PHOTOSENSITIVE RESIN COMPOSITION Kansai Research Institute, Inc. (JP) 2004-01-02 EP disclosed
US-20030211421-A1 Optically active compound and photosensitive resin composition KRI, INC. (JP) 2003-11-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030211421-A1 Optically active compound and photosensitive resin composition ARCN1, RAD51, PAM SHBG 3960/4885ESR1 392/4885ESR2 895/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.