SCHEMBL2783708

SCHEMBL2783708

CCC(C(=O)O)[Si](C)(C)O[Si](C)(C)C(CC)C(=O)O

nearest known ligand 0.39

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CA2 P00918 1/20 0.32
MAPK1 P28482 1/20 0.32
CHRM1 P11229 1/20 0.32
AKR1A1 P14550 1/20 0.32
CHRM3 P20309 1/20 0.32
HTR2A P28223 1/20 0.32
HTR2C P28335 1/20 0.32
ADRA1A P35348 1/20 0.32
HRH1 P35367 1/20 0.32
DRD3 P35462 1/20 0.32
SLC6A3 Q01959 1/20 0.32
HDAC1 Q13547 1/20 0.32
HDAC2 Q92769 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
SLC1A3 P43003 1/20 0.31
SLC1A2 P43004 1/20 0.31
SLC1A1 P43005 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8767889 0.78 MAPT (0.38)
SCHEMBL5067300 0.77 CA2 (0.30) CA2MAPK1CHRM1AKR1A1CHRM3
SCHEMBL654433 0.77 CHRM1 (0.36) CA2MAPK1CHRM1AKR1A1CHRM3
SCHEMBL9131322 0.76
SCHEMBL5404993 0.75 CHRM1 (0.35) CA2MAPK1CHRM1AKR1A1CHRM3
SCHEMBL5403967 0.75 CHRM1 (0.35) CA2MAPK1CHRM1AKR1A1CHRM3
SCHEMBL9065140 0.74
SCHEMBL1971029 0.71 CA2 (0.32) CA2MAPK1CHRM1AKR1A1CHRM3
SCHEMBL8467725 0.71
SCHEMBL28481634 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2133743-B1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD (JP) 2018-01-24 EP disclosed
US-8298747-B2 Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2012-10-30 US disclosed
US-20100092879-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART HITACHI CHEMICAL DUPONT MICROSYSTEMS, LTD. (JP) 2010-04-15 US disclosed
EP-2133743-A1 PHOTOSENSITIVE RESIN COMPOSITION, PROCESS FOR PRODUCING PATTERNED HARDENED FILM WITH USE THEREOF AND ELECTRONIC PART Hitachi Chemical DuPont Microsystems, Ltd. (JP) 2009-12-16 EP disclosed
US-7488569-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2009-02-10 US disclosed
EP-1889868-A1 Polymer containing compositions Wacker Chemie AG (DE) 2008-02-20 EP disclosed
US-7144968-B2 Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method FUJITSU LIMITED (JP) 2006-12-05 US disclosed
US-20060263723-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-11-23 US disclosed
US-7122288-B2 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2006-10-17 US disclosed
US-20050038216-A1 Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method FUJITSU LIMITED 2005-02-17 US disclosed
US-6770417-B2 A NEGATIVE RESIST COMPOSITION COMPRISING A CONSTITUENT COMPONENT WHICH HAS A VINYL ETHER STRUCTURE PROTECTED WITH AN ACETAL IN A MOLECULE IS A FILM FORMING POLYMER SOLUBLE IN BASIC SOLUTION AND HAS AN ALKALI SOLUBLE GROUP FUJITSU LIMITED (JP) 2004-08-03 US disclosed
US-6709799-B2 Resist compositions SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-03-23 US disclosed
US-6541077-B1 Negative non-chemical amplification resist polymer or a positive chemical amplification resist polymer FUJITSU LIMITED (JP) 2003-04-01 US disclosed
US-20020177070-A1 Negative resist composition, a method for forming a resist pattern thereof, and a method for fabricating a semiconductor device FUJITSU LIMITED (JP) 2002-11-28 US disclosed
US-20020120058-A1 Silicon-containing polymer, process for its production, resist composition employing it, pattern-forming method and electronic device fabrication method FUJITSU LIMITED 2002-08-29 US disclosed
US-20020058197-A1 Negative resist composition, process for forming resist patterns, and process for manufacturing electron device FUJITSU LIMITED 2002-05-16 US disclosed
EP-1184723-A2 Negative resist composition, process for forming resist patterns, and process for manufacturing electronic device FUJITSU LIMITED (JP) 2002-03-06 EP disclosed
US-6342562-B1 POLYSILICATE MODIFIED WITH ALKYLCARBOXY SILOXANE; AMPLIFICATION; PHOTORESIST FUJITSU LIMITED (JP) 2002-01-29 US disclosed
US-20010036594-A1 Resist composition for use in chemical amplification and method for forming a resist pattern thereof FUJITSU LIMITED (JP) 2001-11-01 US disclosed
US-20010018161-A1 Photosensitive resin for photolithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2001-08-30 US disclosed