SCHEMBL278748

SCHEMBL278748

Cc1cc(Cc2cc(C)c(O)c(Cc3cc(C)c(O)c(Cc4ccc(O)cc4O)c3C)c2C)c(O)c(Cc2cc(C)c(O)c(Cc3cc(C)c(O)c(Cc4ccc(O)cc4O)c3C)c2C)c1

nearest known ligand 0.46

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
AMY1A P0DUB6 1/20 0.46
ALOX5 P09917 3/20 0.40
CYP2C9 P11712 2/20 0.39
CYP2C19 P33261 2/20 0.39
HIF1A Q16665 2/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
TYR P14679 5/20 0.39
MEN1 O00255 2/20 0.38
MAPT P10636 2/20 0.38
KMT2A Q03164 2/20 0.38
HSPA5 P11021 1/20 0.36
CYP2D6 P10635 1/20 0.35
HSD17B10 Q99714 1/20 0.35
TP53 P04637 1/20 0.35
CYP3A4 P08684 1/20 0.35
ALOX15 P16050 1/20 0.35
TSHR P16473 1/20 0.35
HTT P42858 1/20 0.35
TDP1 Q9NUW8 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL278377 1.00 AMY1A (0.46) AMY1AALOX5CYP2C9CYP2C19HIF1A
SCHEMBL10057791 0.97 AMY1A (0.44) AMY1AALOX5CYP2C9CYP2C19HIF1A
SCHEMBL30374684 0.93 ALOX5 (0.45) ALOX5TYRMEN1MAPTKMT2A
SCHEMBL29636466 0.93 ALOX5 (0.45) ALOX5TYRMEN1MAPTKMT2A
SCHEMBL278567 0.93 ALOX5 (0.45) ALOX5TYRMEN1MAPTKMT2A
SCHEMBL7930652 0.85 AMY1A (0.51) AMY1ACYP2C9CYP2C19HIF1ASMN1; SMN2
SCHEMBL4004589 0.85 AMY1A (0.61) AMY1AALOX5CYP2C9CYP2C19HIF1A
SCHEMBL4059100 0.85 AMY1A (0.61) AMY1AALOX5CYP2C9CYP2C19HIF1A
SCHEMBL30703618 0.85 AMY1A (0.61) AMY1AALOX5CYP2C9CYP2C19HIF1A
SCHEMBL4055159 0.85 AMY1A (0.61) AMY1AALOX5CYP2C9CYP2C19HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-8133550-B2 Good breaking elongation characteristics, achievable high sensitivity and high film remaining rate, little in pattern size fluctuation at the heating time after lithographic process, capable of stable pattern formation; manufacturing a semiconductor device FUJIFILM CORPORATION (JP) 2012-03-13 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed
US-20080076849-A1 POLYBENZOXAZOLE PRECURSOR, PHOTOSENSITIVE RESIN COMPOSITION USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2008-03-27 US disclosed