SCHEMBL28026405

SCHEMBL28026405

CCCN(CCC)OC(=O)c1ccccc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.55
TSHR P16473 3/20 0.48
F2 P00734 1/20 0.47
TDP1 Q9NUW8 4/20 0.44
CYP2D6 P10635 2/20 0.44
CYP1A2 P05177 1/20 0.44
CYP2C19 P33261 1/20 0.44
KMT2A Q03164 3/20 0.43
SLC6A3 Q01959 2/20 0.43
CES2 O00748 2/20 0.43
CES1 P23141 2/20 0.43
MAPK1 P28482 1/20 0.43
HIF1A Q16665 1/20 0.43
HTR1A P08908 1/20 0.43
SCN1A P35498 1/20 0.43
SCN5A Q14524 1/20 0.43
SCN2A Q99250 1/20 0.43
SCN3A Q9NY46 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
TP53 P04637 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11850307 0.89 LMNA (0.51) LMNATSHRF2TDP1CYP2D6
SCHEMBL26892136 0.89 ADRA2C (0.47) LMNATSHRF2TDP1CYP2D6
SCHEMBL27851129 0.88 LMNA (0.50) LMNATSHRF2TDP1CES2
SCHEMBL4410632 0.87 KMT2A (0.44) LMNATSHRKMT2ASMN1; SMN2
SCHEMBL28429762 0.86 CES2 (0.49) LMNATSHRTDP1CES2CES1
SCHEMBL1730081 0.85 LMNA (0.53) LMNATSHRF2TDP1CYP2D6
SCHEMBL5678485 0.84 LMNA (0.53) LMNATSHRF2TDP1CYP2D6
Hydrochloric Acid SCHEMBL27431202 0.83 LMNA (0.52) LMNATSHRF2TDP1CYP2D6
SCHEMBL8604492 0.81 LMNA (0.47) LMNATSHRF2TDP1KMT2A
Hydrochloric Acid SCHEMBL9134016 0.81 LMNA (0.44) LMNATSHRTDP1CYP2D6CYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105607426-B Polymer, chemical amplification negative resist composition and pattern forming method SHIN ETSU CHEMICAL COMPANY (JP) 2019-11-01 CN disclosed
CN-104330955-B For the chemical-amplification positive anti-corrosion agent composition and patterning method of EB or EUV lithographic printings 信越化学工业株式会社 2018-05-25 CN disclosed
CN-104199255-B Chemistry amplification negative resist composition and patterning method for EB or EUV lithographic printings 信越化学工业株式会社 2018-03-13 CN disclosed
CN-102243439-B Chemically amplified positive resist composition for electron beam or extreme ultraviolet lithography SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-16 CN disclosed
CN-102129172-B The method of negative resist composition and formation pattern SHIN-ETSU CHEMICAL INDUSTRY CO., LTD. (JP) 2015-09-09 CN disclosed
CN-102321212-B Polymkeric substance, chemical-amplification positive anti-corrosion agent composition and pattern formation method SHIN-ETSU CHEMICAL INDUSTRY CO., LTD. (JP) 2015-08-19 CN disclosed
CN-102096321-B Negative resist composition and patterning process SHINETSU CHEMICAL CO 2015-05-13 CN disclosed
CN-104330955-A CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR EB OR EUV LITHOGRAPHY AND PATTERNING PROCESS SHINETSU CHEMICAL CO 2015-02-04 CN disclosed
CN-102221783-B Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO 2015-01-28 CN disclosed
CN-102321212-A Polymer, chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO 2012-01-18 CN disclosed