SCHEMBL28401883

SCHEMBL28401883

C=CCOc1cc([N+](=O)[O-])[c]cc1OC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 3/20 0.39
MEN1 O00255 3/20 0.39
KMT2A Q03164 3/20 0.39
CTDSP1 Q9GZU7 1/20 0.39
PDE4B Q07343 4/20 0.37
PDE4A P27815 1/20 0.37
PDE4C Q08493 1/20 0.37
PDE4D Q08499 1/20 0.37
ALDH1A1 P00352 4/20 0.34
HTT P42858 1/20 0.34
HTR1A P08908 1/20 0.34
CYP3A4 P08684 2/20 0.34
HSD17B10 Q99714 2/20 0.34
MAPT P10636 1/20 0.34
ALOX15 P16050 1/20 0.34
PRKDC P78527 1/20 0.34
ERN1 O75460 1/20 0.34
CYP2D6 P10635 2/20 0.34
PTGS1 P23219 1/20 0.34
PTGS2 P35354 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28402296 0.91 MEN1 (0.34) KDM4EMEN1KMT2ACTDSP1ALDH1A1
SCHEMBL123690 0.82 ALDH1A1 (0.43) KDM4ECTDSP1ALDH1A1HTTCYP3A4
SCHEMBL2335862 0.78 MAPT (0.37) KMT2AALDH1A1HTTCYP3A4MAPT
SCHEMBL3392935 0.77 MAPT (0.37) ALDH1A1HTTCYP3A4MAPTCYP2D6
SCHEMBL3392298 0.76 MAPT (0.36) ALDH1A1HTTCYP3A4MAPTCYP2D6
SCHEMBL13673810 0.76 MEN1 (0.47) MEN1KMT2AALDH1A1HTTHTR1A
SCHEMBL4359591 0.74 HTT (0.54) KDM4EMEN1KMT2ACTDSP1PDE4B
SCHEMBL1356676 0.74 ALDH1A1 (0.47) KDM4EALDH1A1HTTCYP3A4HSD17B10
SCHEMBL21808035 0.71 HTT (0.38) KDM4EMEN1KMT2AALDH1A1HTT
SCHEMBL28394133 0.71 PKM (0.40) KDM4EMEN1KMT2ACTDSP1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111183143-B Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and method for manufacturing transistor 株式会社 尼康 2023-04-04 CN disclosed
CN-110198946-B Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and method for manufacturing transistor 株式会社尼康 2022-04-26 CN disclosed
CN-111183143-A Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and method for manufacturing transistor 株式会社尼康 2020-05-19 CN disclosed