SCHEMBL2865145

SCHEMBL2865145

Cc1c(C)c(OS(=O)(=O)C(F)(F)F)c2ccccc2c1O

nearest known ligand 0.34

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 2/20 0.34
GAA P10253 3/20 0.34
MEN1 O00255 2/20 0.34
ESR1 P03372 2/20 0.34
KMT2A Q03164 2/20 0.34
ESR2 Q92731 2/20 0.34
CXCR2 P25025 2/20 0.33
HSD17B10 Q99714 2/20 0.33
CYP2C9 P11712 1/20 0.33
HPGD P15428 1/20 0.33
TSHR P16473 1/20 0.33
ALOX12 P18054 1/20 0.33
ATIC P31939 1/20 0.33
CXCR1 P25024 1/20 0.32
MCL1 Q07820 2/20 0.32
HTT P42858 2/20 0.32
HSD11B1 P28845 1/20 0.32
ERN1 O75460 1/20 0.32
TP53 P04637 1/20 0.32
MAPT P10636 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7582375 0.88 GAA (0.34) KDM4EGAAMEN1ESR1KMT2A
SCHEMBL7584823 0.81 KDM4E (0.38) KDM4EGAAMEN1ESR1KMT2A
SCHEMBL7584619 0.78 GAA (0.36) KDM4EGAAHSD17B10HPGDHTT
SCHEMBL7574543 0.75 MMP2 (0.35) KDM4EGAAMEN1KMT2AHSD17B10
SCHEMBL7575551 0.75 MEN1 (0.52) GAAMEN1ESR1KMT2AESR2
SCHEMBL17847647 0.72 KDM4E (0.48) KDM4EMEN1KMT2AHSD17B10CYP2C9
SCHEMBL15093426 0.72 CXCR2 (0.34) CXCR2HSD17B10CXCR1HTTMAPT
SCHEMBL17287531 0.72 ADORA2A (0.36) KDM4ECXCR2HSD17B10CYP2C9CXCR1
SCHEMBL19617217 0.71 TUBB4A (0.43) KDM4EKMT2AHPGDERN1TP53
SCHEMBL31459764 0.71 TUBB4A (0.43) KDM4EKMT2AHPGDERN1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7829259-B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2010-11-09 US disclosed
US-7592123-B2 Resin for photoresist composition, photoresist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-09-22 US disclosed
US-20090142700-A1 RESIN FOR PHOTORESIST COMPOSITION, PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-04 US disclosed
US-20070065748-A1 Resin for photoresist composition, photoresist composition and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2007-03-22 US disclosed
US-6800423-B2 NEGATIVE RADIATION-SENSITIVE COMPOSITION, WHICH IS SUITABLE FOR EXPOSURE OF A FAR ULTRAVIOLET LIGHT COMPRISING A WAVELENGTH 193 NM OF ARF EXCIMER-LASER, FREED FROM CAUSES OF RESOLUTION DETERIORATION SUCH AS SWELLING DUE TO PERMEATION OF RENESAS TECHNOLOGY CORP. (JP) 2004-10-05 US disclosed
US-20030134232-A1 Radiation-sensitive composition and method for forming patterns and fabricating semiconductor devices RENESAS ELECTRONICS CORPORATION (JP) 2003-07-17 US disclosed
US-20020196896-A1 Exposure method, exposure apparatus, X-ray mask, semiconductor device and microstructure MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-12-26 US disclosed
EP-1193553-A2 Exposure method, exposure apparatus, x-ray mask, semiconductor device and microstructure MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2002-04-03 EP disclosed