SCHEMBL2866415

SCHEMBL2866415

CO[Si](C)(C)CC[Si](C)(CC[Si](C)(C)OC)CC[Si](C)(C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL331046 0.89
SCHEMBL9973559 0.80
SCHEMBL2739834 0.78
SCHEMBL1889271 0.78 LMNA (0.32)
SCHEMBL13145858 0.77
SCHEMBL648313 0.76
SCHEMBL703801 0.76
SCHEMBL12890944 0.75
SCHEMBL17539032 0.75
SCHEMBL13038578 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2154708-B1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHINETSU CHEMICAL CO (JP) 2017-07-26 EP disclosed
US-8277600-B2 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-10-02 US disclosed
US-20100040895-A1 HIGH-TEMPERATURE BONDING COMPOSITION, SUBSTRATE BONDING METHOD, AND 3-D SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-18 US disclosed
EP-2154708-A1 High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-02-17 EP disclosed