SCHEMBL703801

SCHEMBL703801

CO[Si](C)(C)CCCC[Si](C)(C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9785099 0.97
SCHEMBL2956125 0.97
SCHEMBL557306 0.97
SCHEMBL3229729 0.97
SCHEMBL931332 0.97
SCHEMBL648313 0.93
SCHEMBL28372317 0.91
SCHEMBL28368189 0.88 MGAM (0.31)
SCHEMBL6703624 0.88 LMNA (0.39)
SCHEMBL28368573 0.88 MGAM (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11592945-B2 Dielectric siloxane particle films and devices having the same INKRON OY (FI) 2023-02-28 US disclosed
CN-106605309-B LED lamp, manufacturing method of LED lamp and sealing method of LED device 英克伦股份有限公司 2022-10-18 CN disclosed
CN-106661227-B Dielectric film and manufacturing method thereof, display and manufacturing method thereof, composition and touch panel 英克伦股份有限公司 2022-07-22 CN disclosed
US-11289666-B2 Electrically conductive siloxane particle films, and devices with the same INKRON OY (FI) 2022-03-29 US disclosed
EP-3158595-B1 LED LAMP WITH SILOXANE PARTICLE MATERIAL INKRON OY (FI) 2021-12-01 EP disclosed
EP-3359991-B1 DISPLAYS COMPRISING DIELECTRIC SILOXANE POLYMER FILMS INKRON OY (FI) 2021-09-29 EP disclosed
US-11084928-B2 Transparent siloxane encapsulant and adhesive INKRON OY (FI) 2021-08-10 US disclosed
US-11001674-B2 Method of making a siloxane polymer composition INKRON OY (FI) 2021-05-11 US disclosed
EP-3359373-B1 METHOD FOR MAKING A 3D PRINTED ARTICLE AND 3D PRINTED ARTICLE INKRON OY (FI) 2021-04-14 EP disclosed
US-10658554-B2 LED lamp with siloxane particle material INKRON OY (FI) 2020-05-19 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
EP-2163664-A1 Method for depositing si-containing film, insulator film, and semiconductor device Shin-Etsu Chemical Co., Ltd. (JP) 2010-03-17 EP disclosed
US-20100061915-A1 METHOD FOR DEPOSITING SI-CONTAINING FILM, INSULATOR FILM, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed