SCHEMBL648313

SCHEMBL648313

CO[Si](C)(C)CCC[Si](C)(C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703801 0.93
SCHEMBL13089578 0.91
SCHEMBL557306 0.90
SCHEMBL931332 0.90
SCHEMBL2956125 0.90
SCHEMBL9785099 0.90
SCHEMBL3229729 0.90
SCHEMBL2860349 0.88
SCHEMBL1887028 0.88 LMNA (0.39)
SCHEMBL5027533 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 161 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4570877-A1 SURFACE TREATMENT AGENT DAIKIN INDUSTRIES, LTD. (JP) 2025-06-18 EP disclosed
CN-119698451-A Surface treating agent 大金工业株式会社 2025-03-25 CN disclosed
EP-4509551-A1 SURFACE TREATMENT AGENT DAIKIN INDUSTRIES, LTD. (JP) 2025-02-19 EP disclosed
WO-2025028568-A1 SURFACE TREATMENT AGENT ダイキン工業株式会社 2025-02-06 WO disclosed
CN-119053645-A Surface treating agent 大金工业株式会社 2024-11-29 CN disclosed
WO-2024034668-A1 SURFACE TREATMENT AGENT ダイキン工業株式会社 2024-02-15 WO disclosed
WO-2023204276-A1 SURFACE TREATMENT AGENT ダイキン工業株式会社 2023-10-26 WO disclosed
US-11592945-B2 Dielectric siloxane particle films and devices having the same INKRON OY (FI) 2023-02-28 US disclosed
CN-106605309-B LED lamp, manufacturing method of LED lamp and sealing method of LED device 英克伦股份有限公司 2022-10-18 CN disclosed
CN-106661227-B Dielectric film and manufacturing method thereof, display and manufacturing method thereof, composition and touch panel 英克伦股份有限公司 2022-07-22 CN disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed