SCHEMBL28784604

SCHEMBL28784604

O=COC(c1cccc2ccccc12)(C(F)(F)F)C(F)(F)S(=O)(=O)O

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RORC P51449 2/20 0.38
RORA P35398 1/20 0.38
NR1H2 P55055 1/20 0.38
NR1H4 Q96RI1 1/20 0.38
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA9 Q16790 1/20 0.36
ERN1 O75460 1/20 0.35
KDM4E B2RXH2 3/20 0.35
MEN1 O00255 3/20 0.35
KMT2A Q03164 3/20 0.35
ACP3 P15309 2/20 0.35
NPY1R P25929 1/20 0.34
NPY5R Q15761 1/20 0.34
PTPRC P08575 1/20 0.34
SLC2A1 P11166 3/20 0.32
HCRTR1 O43613 1/20 0.32
F2 P00734 2/20 0.32
PRSS1 P07477 2/20 0.32
PRSS2 P07478 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3876388 0.77 KDM4E (0.43) RORCRORANR1H2NR1H4CA1
SCHEMBL14111208 0.72 KDM4E (0.46) RORCRORANR1H2NR1H4CA1
SCHEMBL3871886 0.72 MEN1 (0.44) RORCRORANR1H2NR1H4CA1
SCHEMBL3249388 0.69 ALDH1A1 (0.43) KDM4EMEN1KMT2AACP3PTPRC
SCHEMBL35772 0.68 KEAP1 (0.43) CA1CA2CA9KDM4EMEN1
SCHEMBL29763080 0.68 KEAP1 (0.43) CA1CA2CA9KDM4EMEN1
SCHEMBL11651931 0.67 KEAP1 (0.42) CA1CA2CA9KDM4EMEN1
1-Naphthol SCHEMBL6306784 0.67 CYP1A2 (0.65) RORCRORANR1H2NR1H4CA1
SCHEMBL1719758 0.67 KEAP1 (0.42) CA1CA2CA9KDM4EMEN1
SCHEMBL11606350 0.67 KEAP1 (0.42) CA1CA2CA9KDM4EMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106444288-A Chemically amplified positive resist composition and pattern forming process 信越化学工业株式会社 2017-02-22 CN disclosed
CN-101625524-A Photoresist composition and pattern forming method SHINETSU CHEMICAL CO 2010-01-13 CN disclosed
CN-101625523-A Resist patterning process and manufacturing photo mask SHINETSU CHEMICAL CO 2010-01-13 CN disclosed