Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of Nitric Oxide. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Nitric Oxide SCHEMBL7560 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL3993955 | 0.87 | — | — | |
| Nitric Oxide SCHEMBL306589 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL2731176 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL7184108 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL3636459 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL2888647 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL37670 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL5104249 | 0.75 | — | — | |
| Nitric Oxide SCHEMBL6890944 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-101521281-B | Low cost fuel cell bipolar plate and manufacture method thereof | GM GLOBAL TECHNOLOGY OPERATIONS, INC. (US) | 2015-12-02 | — | — | CN | claimed |
| US-20100283179-A1 | Method of Fabricating Metal Nitrogen Oxide Thin Film Structure | ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH (TW) | 2010-11-11 | — | — | US | claimed |
| CN-101521281-A | Low cost fuel cell bipolar plate and process of making the same | GM GLOBAL TECH OPERATIONS INC | 2009-09-02 | — | — | CN | claimed |
| CN-101521281-B | Low cost fuel cell bipolar plate and manufacture method thereof | GM GLOBAL TECHNOLOGY OPERATIONS, INC. (US) | 2015-12-02 | — | — | CN | disclosed |
| CN-102376566-B | Method of forming a pattern structure for a semiconductor device | SAMSUNG ELECTRONICS CO LTD | 2015-06-10 | — | — | CN | disclosed |
| CN-104321897-A | Organic photonic device | AGC FLAT GLASS EUROPE SA | 2015-01-28 | — | — | CN | disclosed |
| CN-104303381-A | Group-III nitride semiconductor laser element | SUMITOMO ELECTRIC INDUSTRIES | 2015-01-21 | — | — | CN | disclosed |
| CN-103681602-A | Semiconductor device with air space separating conductive structure and its manufacturing method | SAMSUNG ELECTRONICS KK | 2014-03-26 | — | — | CN | disclosed |
| CN-102376566-A | Method of forming a pattern structure for a semiconductor device | SAMSUNG ELECTRONICS CO LTD | 2012-03-14 | — | — | CN | disclosed |
| US-20100283179-A1 | Method of Fabricating Metal Nitrogen Oxide Thin Film Structure | ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH (TW) | 2010-11-11 | — | — | US | disclosed |
| CN-1926668-B | Formation of a silicon oxynitride layer on a high-K dielectric material | APPLIED MATERIALS INC | 2010-09-01 | — | — | CN | disclosed |
| CN-101521281-A | Low cost fuel cell bipolar plate and process of making the same | GM GLOBAL TECH OPERATIONS INC | 2009-09-02 | — | — | CN | disclosed |
| CN-1926668-A | Formation of a silicon oxynitride layer on a high-K dielectric material | APPLIED MATERIALS INC (US) | 2007-03-07 | — | — | CN | disclosed |