SCHEMBL2962450

SCHEMBL2962450

O=COCCCCOC(=O)CCN(CC(=O)C=O)CC(=O)C=O

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2967841 0.91 DGKA (0.30)
SCHEMBL65302 0.84 DNM1 (0.33) DNM1
SCHEMBL2962454 0.78
SCHEMBL2969886 0.76
SCHEMBL5701585 0.74 LTA4H (0.32)
SCHEMBL63210 0.74 DGKA (0.33) DNM1
SCHEMBL5907870 0.71
SCHEMBL26751149 0.70 MGLL (0.37) DNM1
SCHEMBL9481378 0.69 DGKA (0.58) DNM1
SCHEMBL5701598 0.69 LTA4H (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7771913-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-10 US disclosed
US-7655378-B2 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-02 US disclosed
US-7629106-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-08 US disclosed
US-7501223-B2 Polymer, resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-10 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20080090179-A1 Novel polymer, resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-04-17 US disclosed
US-20080020290-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20080020289-A1 Novel polymer, positive resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-24 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-7189493-B2 Polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-13 US disclosed
US-7169541-B2 Compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-01-30 US disclosed
US-20060183051-A1 Positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-17 US disclosed
US-20060147836-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
US-20050014092-A1 Novel compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-01-20 US disclosed