SCHEMBL2965787

SCHEMBL2965787

CCCCS(=O)(=O)C(=[N+]=[N-])S(=O)(=O)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 1/20 0.41
GAA P10253 3/20 0.40
PSIP1 O75475 1/20 0.39
PKM P14618 1/20 0.38
ALDH1A1 P00352 4/20 0.37
TP53 P04637 2/20 0.37
HTT P42858 1/20 0.37
HSD17B10 Q99714 1/20 0.37
TSHR P16473 1/20 0.36
MMP1 P03956 3/20 0.36
MMP7 P09237 3/20 0.36
MMP12 P39900 3/20 0.36
MMP13 P45452 3/20 0.36
ACE P12821 2/20 0.36
HSD11B1 P28845 1/20 0.36
NPC1 O15118 1/20 0.36
S1PR2 O95136 1/20 0.36
LMNA P02545 1/20 0.36
PRNP P04156 1/20 0.36
MAPT P10636 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23923246 0.94 TDP1 (0.40) TDP1GAAPSIP1PKMMMP1
SCHEMBL23923247 0.94 TDP1 (0.40) TDP1GAAPSIP1PKMMMP1
SCHEMBL2165382 0.94 GAA (0.45) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL36075 0.92 ALDH1A1 (0.38) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL36315 0.92 ALDH1A1 (0.38) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL36313 0.90 HDAC3 (0.39) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL36858 0.90 HDAC3 (0.39) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL13657224 0.90 HDAC3 (0.39) TDP1GAAPSIP1PKMALDH1A1
SCHEMBL10072231 0.82 ALDH1A1 (0.40) TDP1PSIP1PKMALDH1A1TP53
SCHEMBL13597464 0.81 HDAC1 (0.39) PSIP1ALDH1A1TP53HTTHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117467307-A curable composition 东京应化工业株式会社 2024-01-30 CN disclosed
EP-3896522-B1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2023-05-03 EP disclosed
EP-3896522-A1 PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2021-10-20 EP disclosed
US-7767377-B2 Positive type resist composition, process for forming resist pattern, and process for performing ion implantation TOKYO OHKA KOGYO CO., LTD. (JP) 2010-08-03 US disclosed
US-20080020321-A1 Positive Type Resist Composition, Process for Forming Resist Pattern, and Process for Performing Ion Implantation TOKYO OHKA KOGYO, CO., LTD. (JP) 2008-01-24 US disclosed