Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.38 |
| ▸ | TP53 | P04637 | 2/20 | 0.38 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | NPC1 | O15118 | 1/20 | 0.38 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.38 |
| ▸ | PRNP | P04156 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 1/20 | 0.38 |
| ▸ | XBP1 | P17861 | 1/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.38 |
| ▸ | RAB9A | P51151 | 1/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.38 |
| ▸ | ATM | Q13315 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.37 |
| ▸ | HTT | P42858 | 1/20 | 0.37 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.36 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.36 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.36 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36858 | 0.98 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36313 | 0.98 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL13657224 | 0.98 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36075 | 0.97 | ALDH1A1 (0.38) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL23923246 | 0.92 | TDP1 (0.40) | PSIP1TDP1MMP1MMP9MMP13 | |
| SCHEMBL23923247 | 0.92 | TDP1 (0.40) | PSIP1TDP1MMP1MMP9MMP13 | |
| SCHEMBL2965787 | 0.92 | TDP1 (0.41) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL13597464 | 0.89 | HDAC1 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL2165382 | 0.88 | GAA (0.45) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL10072231 | 0.86 | ALDH1A1 (0.40) | ALDH1A1SMN1; SMN2TP53LMNANPC1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 592 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6153733-A | (Disulfonyl diazomethane compounds) | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-11-28 | — | — | US | claimed |
| CN-120044751-A | Photosensitive resin composition | 东京应化工业株式会社 | 2025-05-27 | — | — | CN | disclosed |
| WO-2024053579-A1 | PHOTOSENSITIVE RESIN COMPOSITION | 東京応化工業株式会社 | 2024-03-14 | — | — | WO | disclosed |
| US-20240034899-A1 | CURABLE COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2024-02-01 | — | — | US | disclosed |
| EP-3896522-B1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2023-05-03 | — | — | EP | disclosed |
| EP-2584409-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, POLYMERIC COMPOUND, AND COMPOUND | TOKYO OHKA KOGYO CO LTD (JP) | 2021-04-28 | — | — | EP | disclosed |
| EP-2060600-B1 | Resist composition, method of forming resist pattern, novel compound, and acid generator | TOKYO OHKA KOGYO CO LTD (JP) | 2017-12-27 | — | — | EP | disclosed |
| US-9834696-B2 | Undercoat agent and method of forming pattern of layer containing block copolymer | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-12-05 | — | — | US | disclosed |
| US-9821338-B2 | Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA | TOKYO OHKA KOGYO., LTD. (JP) | 2017-11-21 | — | — | US | disclosed |
| EP-2093213-B1 | Positive resist composition and method of forming a resist pattern using the same | TOKYO OHKA KOGYO CO LTD (JP) | 2017-10-04 | — | — | EP | disclosed |
| EP-1602977-A1 | Positive resist composition and compound used therein | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-12-07 | — | — | EP | disclosed |
| US-20050266340-A1 | Positive resist composition and compound used therein | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-12-01 | — | — | US | disclosed |
| US-20050244740-A1 | Chemically amplified positive photo resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-11-03 | — | — | US | disclosed |
| US-20050227170-A1 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-13 | — | — | US | disclosed |
| US-20050227171-A1 | Lift-off positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-13 | — | — | US | disclosed |
| US-20050221225-A1 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-06 | — | — | US | disclosed |
| EP-1582925-A2 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-05 | — | — | EP | disclosed |
| EP-1582926-A2 | Positive resist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-10-05 | — | — | EP | disclosed |
| US-6180313-B1 | SUITABLE AS RADIATION-SENSITIVE ACID-GENERATING AGENT; PHOTORESISTS FOR USE IN PHOTOLITHOGRAPHY | TOKYO OHKA KOGYO CO., LTD. (JP) | 2001-01-30 | — | — | US | disclosed |
| US-6153733-A | (Disulfonyl diazomethane compounds) | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-11-28 | — | — | US | disclosed |