Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.40 |
| ▸ | TP53 | P04637 | 2/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | NPC1 | O15118 | 1/20 | 0.40 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.40 |
| ▸ | PRNP | P04156 | 1/20 | 0.40 |
| ▸ | MAPT | P10636 | 1/20 | 0.40 |
| ▸ | XBP1 | P17861 | 1/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | RAB9A | P51151 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | ATM | Q13315 | 1/20 | 0.40 |
| ▸ | TSHR | P16473 | 1/20 | 0.39 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.39 |
| ▸ | HTT | P42858 | 2/20 | 0.39 |
| ▸ | HTR6 | P50406 | 1/20 | 0.37 |
| ▸ | PSIP1 | O75475 | 1/20 | 0.36 |
| ▸ | CA1 | P00915 | 2/20 | 0.35 |
| ▸ | CA2 | P00918 | 2/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13657224 | 0.88 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36858 | 0.88 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36313 | 0.88 | HDAC3 (0.39) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL65095 | 0.86 | SMN1; SMN2 (0.46) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36315 | 0.86 | ALDH1A1 (0.38) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL36075 | 0.86 | ALDH1A1 (0.38) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL2165382 | 0.84 | GAA (0.45) | ALDH1A1SMN1; SMN2TP53LMNANPC1 | |
| SCHEMBL23923247 | 0.82 | TDP1 (0.40) | PSIP1MMP1MMP9MMP13PKM | |
| SCHEMBL23923246 | 0.82 | TDP1 (0.40) | PSIP1MMP1MMP9MMP13PKM | |
| SCHEMBL2965787 | 0.82 | TDP1 (0.41) | ALDH1A1SMN1; SMN2TP53LMNANPC1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9176381-B2 | Positive type photosensitive resin composition | CHEIL INDUSTRIES INC. (KR) | 2015-11-03 | — | — | US | disclosed |
| US-8389197-B2 | Compound, positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-05 | — | — | US | disclosed |
| US-8304163-B2 | Compound, dissolution inhibitor, positive type resist composition, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-11-06 | — | — | US | disclosed |
| US-8216763-B2 | Photosensitive resin composition and method of forming pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-07-10 | — | — | US | disclosed |
| US-8206887-B2 | Positive resist composition and resist pattern forming method | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-06-26 | — | — | US | disclosed |
| US-8026047-B2 | Providing film on substrate, forming resist pattern on film through lithography technique including exposure and development, and performing processing in which film is brought into contact with supercritical processing solution in which an organic matter is dissolved; accuracy, sensitivity | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2011-09-27 | — | — | US | disclosed |
| US-7981588-B2 | Negative resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-19 | — | — | US | disclosed |
| US-7977036-B2 | Using resist composition which has a photosensitivity to a predetermined light source and bringing the resist pattern formed on the substrate into contact with a supercritical processing solution comprising a supercritical fluid which contains a crosslinking agent; fine resist pattern, etching resistance | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2011-07-12 | — | — | US | disclosed |
| US-7972762-B2 | resist pattern with reduced defects and excellent lithographic characteristics; acrylate ester copolymer obtained by polymerizing an ( alpha -lower alkyl)acrylate ester having tertiary alkyl ester-type acid dissociable dissolution inhibiting group, under a presence of acid | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-07-05 | — | — | US | disclosed |
| US-20110159428-A1 | Positive Type Photosensitive Resin Composition | CHEIL INDUSTRIES INC. (KR) | 2011-06-30 | — | — | US | disclosed |
| US-20090068583-A1 | resin comprises (2-adamantyloxymethyl)methacrylate monomers which exhibit increased alkali solubility under action of acid, and acid generator such as diphenyliodonium trifluoromethanesulfonate; reduced line edge roughness, improved shape and depth of focus | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090068588-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-20090047600-A1 | high resolution pattern with reduced line edge roughness; increased alkali solubility under action of acid generator | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-19 | — | — | US | disclosed |
| US-20090042129-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090035697-A1 | NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKAKOGYO CO.,LTD. (JP) | 2009-02-05 | — | — | US | disclosed |
| US-20090029291-A1 | POSITIVE RESIST COMPOSITION FOR THIN-FILM IMPLANTATION PROCESS AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-29 | — | — | US | disclosed |
| US-20080145784-A1 | Positive Resist Composition, Method For Resist Pattern Formation and Compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-06-19 | — | — | US | disclosed |
| US-20080124648-A1 | Resist Pattern Forming Method, Supercritical Processing Solution For Lithography Process, And Antireflection Film Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20080118871-A1 | Resist Pattern Forming Method | NIPPON TELEGRAPH AND TELEPHONE CORPORATION (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20070196764-A1 | RESIST COMPOSITION FOR SUPERCRITICAL DEVELOPMENT | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-08-23 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080145784-A1 | Positive Resist Composition, Method For Resist Pattern Formation and Compound | POLR1A, POLR2A, POLR2B | ALDH1A1 1525/4885SMN1; SMN2 2834/4885TP53 3271/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.