SCHEMBL296959

SCHEMBL296959

Cc1cccc(C2CC(=O)NC(=O)C2)c1

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HTR2C P28335 2/20 0.54
L3MBTL1 Q9Y468 2/20 0.51
TDP1 Q9NUW8 1/20 0.51
KMT2A Q03164 2/20 0.47
MEN1 O00255 1/20 0.47
HSD17B10 Q99714 3/20 0.44
CYP3A4 P08684 1/20 0.44
CYP2C9 P11712 1/20 0.44
CYP2C19 P33261 1/20 0.44
MAP1LC3B Q9GZQ8 1/20 0.42
ALOX15 P16050 2/20 0.42
ALOX15B O15296 1/20 0.42
ALOX12 P18054 1/20 0.42
HCAR2 Q8TDS4 1/20 0.42
MAPT P10636 2/20 0.41
LMNA P02545 1/20 0.41
PBRM1 Q86U86 1/20 0.41
CYP19A1 P11511 1/20 0.40
RXFP1 Q9HBX9 1/20 0.40
DRD2 P14416 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30762101 0.83 HTR2C (0.55) HTR2CL3MBTL1TDP1KMT2AMEN1
SCHEMBL426392 0.83 HTR2C (0.55) HTR2CL3MBTL1TDP1KMT2AMEN1
SCHEMBL1269222 0.83 PDE4A (0.55) HTR2CKMT2AMEN1CYP3A4CYP2C9
SCHEMBL12676477 0.80 MAPT (0.60) HTR2CL3MBTL1TDP1KMT2AMEN1
SCHEMBL29496818 0.80 MAPT (0.60) HTR2CL3MBTL1TDP1KMT2AMEN1
SCHEMBL5354030 0.79 TDP1 (0.59) HTR2CL3MBTL1TDP1KMT2AMEN1
SCHEMBL31348863 0.79 LMNA (0.51) KMT2AMAPTLMNATSHRHTT
SCHEMBL30817379 0.79 ALDH1A1 (0.52) HTR2CL3MBTL1KMT2AMEN1MAP1LC3B
SCHEMBL25819902 0.78 DDB1 (0.44) LMNADDB1CRBN
SCHEMBL25819000 0.78 MGLL (0.46) HTR2CCYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103210047-B The diazene * dioxide of the substitution containing N and/or the aqueous polishing composition of N '-hydroxyls-diazene * oxide salts 巴斯夫欧洲公司 2018-07-17 CN disclosed
EP-2331649-B1 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORP (US) 2018-06-13 EP disclosed
CN-1742066-B The siliceous dielectric method of polishing CABOT MICROELECTRONICS CORP. (US) 2015-10-21 CN disclosed
CN-103080256-B Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films BASF SE 2015-06-24 CN disclosed
US-8597540-B2 Compositions for polishing silicon-containing substrates CABOT MICROELECTRONICS CORPORATION (US) 2013-12-03 US disclosed
US-20130200039-A1 AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS BASF SE (DE) 2013-08-08 US disclosed
US-8486169-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2013-07-16 US disclosed
US-20130168348-A1 AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC AND POLYSILICON FILMS BASF SE (DE) 2013-07-04 US disclosed
US-20130171824-A1 PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES CONTAINING SILICON OXIDE DIELECTRIC FILMS AND POLYSILICON AND/OR SILICON NITRIDE FILMS BASF SE (DE) 2013-07-04 US disclosed
US-20120280170-A1 COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORPORATION 2012-11-08 US disclosed
WO-2010014180-A2 METHODS AND COMPOSITIONS FOR POLISHING SILICON-CONTAINING SUBSTRATES CABOT MICROELECTRONICS CORPORATION (US) 2010-02-04 WO disclosed
US-20100029181-A1 Methods and compositions for polishing silicon-containing substrates CMC MATERIALS LLC 2010-02-04 US disclosed
US-20090029633-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2009-01-29 US disclosed
US-7442645-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2008-10-28 US disclosed
US-20060196848-A1 Readily deinkable toners MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT 2006-09-07 US disclosed
US-20060144824-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-06 US disclosed
US-7071105-B2 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION (US) 2006-07-04 US disclosed
EP-1601735-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC Cabot Microelectronics Corporation (US) 2005-12-07 EP disclosed
WO-2004069947-A1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC CABOT MICROELECTRONICS CORPORATION (US) 2004-08-19 WO disclosed
US-20040152309-A1 Method of polishing a silicon-containing dielectric CABOT MICROELECTRONICS CORPORATION 2004-08-05 US disclosed