Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 5/20 | 0.33 |
| ▸ | GAA | P10253 | 3/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | MAPT | P10636 | 2/20 | 0.32 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | NPC1 | O15118 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.32 |
| ▸ | MRGPRX1 | Q96LB2 | 1/20 | 0.32 |
| ▸ | GLA | P06280 | 1/20 | 0.31 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.31 |
| ▸ | PKM | P14618 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.30 |
| ▸ | PAX8 | Q06710 | 1/20 | 0.30 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36729 | 1.00 | KMT2A (0.33) | KMT2AGAAALDH1A1MAPTTHRB | |
| SCHEMBL14707492 | 0.90 | L3MBTL1 (0.38) | ALDH1A1MAPTTHRBL3MBTL1NPC1 | |
| SCHEMBL2702572 | 0.87 | PLA2G7 (0.40) | KMT2AALDH1A1MAPTL3MBTL1MEN1 | |
| SCHEMBL2702574 | 0.87 | PLA2G7 (0.40) | KMT2AALDH1A1MAPTL3MBTL1MEN1 | |
| SCHEMBL4825409 | 0.86 | RECQL (0.39) | KMT2AGAAALDH1A1MAPTMEN1 | |
| SCHEMBL4825418 | 0.86 | RECQL (0.39) | KMT2AGAAALDH1A1MAPTMEN1 | |
| SCHEMBL13197850 | 0.86 | KDM4E (0.31) | — | |
| SCHEMBL17557252 | 0.86 | LMNA (0.33) | ALDH1A1MAPTNPC1LMNARAB9A | |
| SCHEMBL18431384 | 0.86 | LMNA (0.33) | ALDH1A1MAPTNPC1LMNARAB9A | |
| SCHEMBL9891194 | 0.86 | LMNA (0.33) | ALDH1A1MAPTNPC1LMNARAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 300 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| EP-3896522-B1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2023-05-03 | — | — | EP | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3896522-A1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2021-10-20 | — | — | EP | disclosed |
| CN-108137478-B | Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method | 三菱瓦斯化学株式会社 | 2021-09-28 | — | — | CN | disclosed |
| CN-107924123-B | Material for lithography, method for producing same, composition for lithography, method for forming pattern, compound, resin, and method for purifying same | 学校法人关西大学 | 2021-08-06 | — | — | CN | disclosed |
| US-6723485-B1 | HEXAFLUOROISOPROPYL (METH)ACRYLATE RESIN AND PHOTOACID GENERATOR; LASER HAVING WAVELENGTH IN VACUUM ULTRAVIOLET REGION | CENTRAL GLASS COMPANY, LIMITED (JP) | 2004-04-20 | — | — | US | disclosed |
| EP-1400853-A1 | POSITIVE RESIST COMPOSITION OF CHEMICAL AMPLIFICATION TYPE, RESIST COATED MATERIAL, METHOD OF FORMING RESIST PATTERN, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2004-03-24 | — | — | EP | disclosed |
| US-20030190550-A1 | Positive resist composition of chemical amplification type, resist coated material, method of forming resist pattern, and process for producing semiconductor device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2003-10-09 | — | — | US | disclosed |
| EP-0780729-B1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO LTD (JP) | 2002-07-10 | — | — | EP | disclosed |
| EP-1103856-A1 | Positive resist composition & process for forming resist pattern using same | Central Glass Company, Limited (JP) | 2001-05-30 | — | — | EP | disclosed |
| US-6153354-A | INCLUDING ALKALI-SOLUBLE RESIN, ACID-CROSSLINKABLE SUBSTANCE, ACID GENERATING AGENT, AND SENSITIZING SUBSTANCE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-11-28 | — | — | US | disclosed |
| US-6063953-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-05-16 | — | — | US | disclosed |
| US-6022666-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2000-02-08 | — | — | US | disclosed |
| US-5902713-A | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1999-05-11 | — | — | US | disclosed |
| EP-0780729-A1 | Chemical-sensitization photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 1997-06-25 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | KMT2A 2526/4885GAA 2880/4885ALDH1A1 3830/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | KMT2A 1321/4885GAA 3007/4885ALDH1A1 2889/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | KMT2A 633/4885GAA 4768/4885ALDH1A1 1540/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | KMT2A 633/4885GAA 4768/4885ALDH1A1 1540/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.