SCHEMBL30769424

SCHEMBL30769424

CC(C)(C)Oc1ccc(-c2ccc(Sc3ccccc3)c(-c3ccc(OC(C)(C)C)c(OC(C)(C)C)c3)c2-c2ccc(OC(C)(C)C)c(OC(C)(C)C)c2)cc1OC(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.33
NSD2 O96028 1/20 0.33
MAPT P10636 1/20 0.33
MAPK1 P28482 1/20 0.33
ATM Q13315 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31474457 0.90 KDM4E (0.41) KDM4ENSD2MAPTMAPK1ATM
SCHEMBL30679023 0.74 ATM (0.35) ATMNPSR1
SCHEMBL27921999 0.73 MAOA (0.43) MAPT
Hydrogen Sulfide SCHEMBL28009127 0.71 MEN1 (0.41) KDM4EATMNPSR1
SCHEMBL31474508 0.70 ATM (0.35) ATMNPSR1
SCHEMBL243271 0.70 ATM (0.35) ATMNPSR1
SCHEMBL31474497 0.70 MMP2 (0.46)
SCHEMBL31474475 0.69 KDM4E (0.44) KDM4ENSD2MAPTMAPK1
SCHEMBL28872362 0.69 SLC6A9 (0.42) KDM4ENSD2MAPTMAPK1
SCHEMBL30444911 0.63 MAOA (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119998727-A Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance YC化学制品株式会社 2025-05-13 CN disclosed
CN-119827495-A Method for testing alkali purity, alkali strength and alkali residue by using photoetching machine 上海微悦芯材新材料有限责任公司 2025-04-15 CN disclosed
CN-119827496-A Method for testing acid strength and acid production efficiency by using photoetching machine and application 上海微悦芯材新材料有限责任公司 2025-04-15 CN disclosed
CN-117501179-A Method of using composition containing organic acid compound, lithographic composition containing organic acid compound, and method of manufacturing resist pattern 默克专利有限公司 2024-02-02 CN disclosed