SCHEMBL243271

SCHEMBL243271

CC(C)(C)Oc1ccc(-c2cccc(S)c2-c2ccc(OC(C)(C)C)c(OC(C)(C)C)c2)cc1OC(C)(C)C

nearest known ligand 0.35

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.31
KCNH2 Q12809 1/20 0.31
PDCD1 Q15116 1/20 0.30
CD274 Q9NZQ7 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30679023 0.86 ATM (0.35) ATMNPSR1
SCHEMBL31474508 0.82 ATM (0.35) ATMNPSR1L3MBTL1KCNH2PDCD1
SCHEMBL244495 0.80 KDM4E (0.40) NPSR1KCNH2
SCHEMBL246926 0.76 PPARG (0.38)
SCHEMBL31474457 0.75 KDM4E (0.41) ATMNPSR1
Hydrogen Sulfide SCHEMBL28009127 0.74 MEN1 (0.41) ATMNPSR1L3MBTL1
SCHEMBL245984 0.73 PTPN1 (0.33)
SCHEMBL242617 0.71 KIF11 (0.46) L3MBTL1
SCHEMBL4085688 0.70 PRKDC (0.34) NPSR1
SCHEMBL30769424 0.70 KDM4E (0.33) ATMNPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 575 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP claimed
US-20250199405-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT YCCHEM CO., LTD. (KR) 2025-06-19 US claimed
WO-2024085293-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT 영창케미칼 주식회사 2024-04-25 WO claimed
US-9075306-B2 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 US claimed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP claimed
EP-1780199-B1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2012-02-01 EP claimed
EP-1780198-B1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2011-10-05 EP claimed
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
US-12493244-B2 Photosensitive resin composition, photosensitive dry film, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-09 US disclosed
EP-4202548-B1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHINETSU CHEMICAL CO (JP) 2025-11-19 EP disclosed
EP-4607278-A1 CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT Ycchem Co., Ltd. (KR) 2025-08-27 EP disclosed
US-12351742-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-08 US disclosed
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-20 US disclosed
US-6395446-B1 CONTAINING SULFONYLDIAZOMETHANE COMPOUND AS ACID GENERATOR SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-28 US disclosed
US-20010036593-A1 Chemical amplification type resist composition SHIN-ETSU CHEMICAL CO., LTD. 2001-11-01 US disclosed
US-20010035394-A1 Chemically amplified positive resist composition and patterning method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-11-01 US disclosed
US-20010033994-A1 Chemical amplification, positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010031421-A1 Chemical amplification resist compositions SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-10-18 US disclosed
EP-1077391-A1 Onium salts, photoacid generators for resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-02-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 ATM 608/4885NPSR1 4554/4885L3MBTL1 1584/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 ATM 1943/4885NPSR1 4265/4885L3MBTL1 437/4885
US-20020076643-A1 Novel onium salts, photoacid generators, resist compositions, and patterning process PNN, PI4K2B, PI4K2A ATM 3479/4885NPSR1 2193/4885L3MBTL1 3024/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.