SCHEMBL3099041

SCHEMBL3099041

CCO[Si](CCCNS(C)(=O)=O)(OCC)OCC

nearest known ligand 0.37

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.37
ALDH1A1 P00352 3/20 0.35
CA1 P00915 2/20 0.34
CA2 P00918 2/20 0.34
CA12 O43570 1/20 0.34
CA7 P43166 1/20 0.34
CA14 Q9ULX7 1/20 0.34
MAPT P10636 1/20 0.32
EPHX2 P34913 1/20 0.31
PPARA Q07869 2/20 0.31
CYP4F2 P78329 1/20 0.30
CYP4A11 Q02928 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3091183 0.88 ALDH1A1 (0.33) POLBALDH1A1CA1MAPT
SCHEMBL16566788 0.80 RELA (0.36) ALDH1A1CA1CA2CA12CA7
SCHEMBL9405213 0.80 POLB (0.39) POLBALDH1A1CA1CA2CA12
SCHEMBL3104136 0.79 CA12 (0.31) CA1CA2CA12CA7CA14
SCHEMBL18940529 0.79 EPHX1 (0.54) CA1CA2CA12CA7CA14
SCHEMBL12134709 0.78 EPHX1 (0.34)
SCHEMBL12134702 0.78 GRIA1 (0.39)
SCHEMBL3099030 0.76 RELA (0.34)
SCHEMBL14150273 0.76
SCHEMBL3098796 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112947000-B Composition for forming silicon-containing EUV resist underlayer film containing sulfonate 日产化学工业株式会社 2024-11-29 CN disclosed
CN-112947000-A Composition for forming silicon-containing EUV resist underlayer film containing sulfonic acid/salt 日产化学工业株式会社 2021-06-11 CN disclosed
US-20210116813-A1 COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-04-22 US disclosed
EP-3786710-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-03 EP disclosed
CN-112005168-A Resist underlayer film forming composition, underlayer film for lithography, and pattern forming method 三菱瓦斯化学株式会社 2020-11-27 CN disclosed
US-10613440-B2 Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2020-04-07 US disclosed
US-10079146-B2 Resist underlayer film forming composition containing silicon containing cyclic organic group having hetero atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-09-18 US disclosed
US-9524871-B2 Silicon-containing resist underlayer film-forming composition having sulfone structure NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-20 US disclosed
US-9494862-B2 Resist underlayer film forming composition containing silicon having sulfone structure and amine structure NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-11-15 US disclosed
US-9291900-B2 Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-20140170855-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
EP-2735904-A1 THIN FILM FORMATION COMPOSITION FOR LITHOGRAPHY WHICH CONTAINS TITANIUM AND SILICON Nissan Chemical Industries, Ltd. (JP) 2014-05-28 EP disclosed
US-20140120730-A1 THIN FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING TITANIUM AND SILICON NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-05-01 US disclosed
EP-2479615-B1 SILICON-CONTAINING COMPOSITION HAVING SULFONAMIDE GROUP FOR FORMING RESIST UNDERLAYER FILM NISSAN CHEMICAL IND LTD (JP) 2014-04-23 EP disclosed
EP-2669737-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILMS, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP Nissan Chemical Industries, Ltd. (JP) 2013-12-04 EP disclosed
US-20130302991-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-11-14 US disclosed
EP-2538276-A1 COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING Nissan Chemical Industries, Ltd. (JP) 2012-12-26 EP disclosed
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2012-12-13 US disclosed
US-20120135651-A1 Fabrics Comprising a Photocatalyst to Produce Singlet Oxygen from Ambient Oxygen VENTANA RESEARCH CORPORATION 2012-05-31 US disclosed
US-20100233632-A1 SILICON-CONTAINING FILM-FORMING COMPOSITION, SILICON-CONTAINING FILM, AND PATTERN FORMING METHOD JSR CORPORATION (JP) 2010-09-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120315765-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING NITROGEN-CONTAINING RING SRSF1, SRSF7, SRRM2 POLB 1809/4885ALDH1A1 2272/4885CA1 692/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.