SCHEMBL3109504

SCHEMBL3109504

C[S+](C)c1ccc([N+](=O)[O-])c2ccccc12.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CTSB P07858 3/20 0.38
MMP1 P03956 2/20 0.37
MMP2 P08253 2/20 0.37
MMP9 P14780 2/20 0.37
MMP8 P22894 2/20 0.37
MMP13 P45452 2/20 0.37
CA2 P00918 1/20 0.37
TDP1 Q9NUW8 1/20 0.36
AR P10275 1/20 0.33
ALDH1A1 P00352 1/20 0.33
MEN1 O00255 3/20 0.33
KMT2A Q03164 3/20 0.33
ABCC9 O60706 1/20 0.32
ABCC8 Q09428 1/20 0.32
KCNJ11 Q14654 1/20 0.32
KCNJ8 Q15842 1/20 0.32
GAA P10253 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
PDK1 Q15118 1/20 0.30
PDK2 Q15119 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3109278 0.99 CTSB (0.37) CTSBMMP1MMP2MMP9MMP8
Trifluoromethanesulfonic Acid SCHEMBL646668 0.87 CTSB (0.43) CTSBTDP1ARALDH1A1MEN1
SCHEMBL3118860 0.87 MMP1 (0.37) CTSBMMP1MMP2MMP9MMP8
SCHEMBL3109622 0.86 MMP1 (0.37) CTSBMMP1MMP2MMP9MMP8
SCHEMBL3120425 0.83 CYP1A2 (0.34) CA2
SCHEMBL3122212 0.81 CYP1A2 (0.33) MMP1MMP2MMP9MMP8MMP13
SCHEMBL271896 0.81 LDHA (0.38) CTSBMMP1MMP2MMP9MMP8
Trifluoromethanesulfonic Acid SCHEMBL1079920 0.81 CTSB (0.45) CTSBTDP1ARALDH1A1MEN1
SCHEMBL3120012 0.81 LDHA (0.37) MMP1MMP2MMP9MMP8MMP13
SCHEMBL3869544 0.80 TDP1 (0.55) CTSBTDP1ARALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8722306-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2014-05-13 US disclosed
US-20100178608-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed
US-7531286-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-05-12 US disclosed
US-7510817-B2 Photoresist polymer compositions JSR CORPORATION (JP) 2009-03-31 US disclosed
US-20070248911-A1 Pattern forming method and bilayer film IWASAWA HARUO 2007-10-25 US disclosed
EP-1641848-B1 PHOTORESIST POLYMER COMPOSITIONS JSR CORP (JP) 2007-08-22 EP disclosed
US-7244549-B2 Pattern forming method and bilayer film JSR CORPORATION (JP) 2007-07-17 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-7144675-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-12-05 US disclosed
US-20060257781-A1 Photoacid generator, and a polymer with units of 2-alkyladamantyl (meth)acrylate, 3-hydroxyadamantyl (meth)acrylate, 1-alkylcyclopentyl (meth)acrylate or 7-oxo-3,8-methano-6-oxabicyclo(3.2.1)octan-4-yl (meth)acrylate, made with a chain transfer agent; e.g. RAFT polymer; narrow polydispersity FREESLATE, INC. 2006-11-16 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030191268-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition IWASAWA HARUO (JP) 2003-10-09 US disclosed
US-20030073040-A1 Pattern forming method and bilayer film JSR CORPORATION (JP) 2003-04-17 US disclosed
US-6531260-B2 Photoresist JSR CORPORATION (JP) 2003-03-11 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed