SCHEMBL3134108

SCHEMBL3134108

O=C(CCCO)N(CCO)CCO

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.44
CAMK2A Q9UQM7 1/20 0.43
ALDH1A1 P00352 4/20 0.39
HPGD P15428 1/20 0.37
POLB P06746 1/20 0.36
GPR84 Q9NQS5 1/20 0.35
FFAR1 O14842 1/20 0.35
FFAR4 Q5NUL3 1/20 0.35
CA12 O43570 1/20 0.35
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA9 Q16790 1/20 0.35
CNR1 P21554 2/20 0.33
GAA P10253 1/20 0.33
CNR2 P34972 1/20 0.33
TRPV1 Q8NER1 1/20 0.33
NTRK2 Q16620 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL21802606 0.92 GPR84 (0.44) LMNACAMK2AALDH1A1HPGDPOLB
SCHEMBL132324 0.92 LMNA (0.46) LMNACAMK2AALDH1A1HPGDPOLB
SCHEMBL29407499 0.92 LMNA (0.52) LMNACAMK2AALDH1A1HPGDPOLB
SCHEMBL8454374 0.90 GPR84 (0.48) LMNACAMK2AALDH1A1HPGDPOLB
SCHEMBL5355206 0.90 LMNA (0.44) LMNAALDH1A1HPGDPOLBGPR84
SCHEMBL21217233 0.90 LMNA (0.44) LMNAALDH1A1HPGDPOLBGPR84
SCHEMBL1202392 0.90 LMNA (0.44) LMNAALDH1A1HPGDPOLBGPR84
SCHEMBL4648086 0.90 LMNA (0.44) LMNAALDH1A1HPGDPOLBGPR84
SCHEMBL1232870 0.86 ALDH1A1 (0.41) LMNACAMK2AALDH1A1HPGDPOLB
SCHEMBL17291895 0.84 LMNA (0.44) LMNACAMK2AALDH1A1HPGDGPR84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7687448-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-30 US claimed
US-20100009885-A1 COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-01-14 US claimed
US-7608540-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-10-27 US claimed
US-20060287207-A1 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-21 US claimed
US-5753708-A Derivatives of 4-hydroxybutyric acid KOEHLER GERNOT (DE) 1998-05-19 US claimed
EP-0536369-A1 4-HYDROXY BUTYRIC ACID DERIVATIVES. KOEHLER CHEMIE DR FRANZ (DE) 1993-04-14 EP claimed
WO-1992019581-A1 4-HYDROXY BUTYRIC ACID DERIVATIVES Dr. Franz Köhler Chemie GmbH (DE) 1992-11-12 WO claimed
US-4143159-A SKIN-CARE AGENTS CONTAINING HYDROXYALKYL CARBOXAMIDES AND PROCESS HENKEL KOMMANDITGESELLSCHAFT AUF AKTIEN (DE) 1979-03-06 US claimed
US-7687448-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-30 US disclosed
US-7687448-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-30 US disclosed
US-7687448-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-03-30 US disclosed
US-20100009885-A1 COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-01-14 US disclosed
US-20100009885-A1 COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-01-14 US disclosed
US-20100009885-A1 COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-01-14 US disclosed
US-7608540-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-10-27 US disclosed
US-7608540-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-10-27 US disclosed
US-7608540-B2 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-10-27 US disclosed
US-20060287207-A1 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-21 US disclosed