Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.58 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.58 |
| ▸ | AOC3 | Q16853 | 2/20 | 0.54 |
| ▸ | TAAR1 | Q96RJ0 | 2/20 | 0.48 |
| ▸ | CARM1 | Q86X55 | 1/20 | 0.47 |
| ▸ | PRMT6 | Q96LA8 | 1/20 | 0.47 |
| ▸ | PRMT8 | Q9NR22 | 1/20 | 0.47 |
| ▸ | NPC1 | O15118 | 2/20 | 0.45 |
| ▸ | RAB9A | P51151 | 2/20 | 0.45 |
| ▸ | LMNA | P02545 | 2/20 | 0.45 |
| ▸ | CA12 | O43570 | 2/20 | 0.45 |
| ▸ | CA9 | Q16790 | 2/20 | 0.45 |
| ▸ | ADRA2B | P18089 | 1/20 | 0.45 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.45 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.45 |
| ▸ | HTR2A | P28223 | 1/20 | 0.45 |
| ▸ | SLC6A4 | P31645 | 1/20 | 0.45 |
| ▸ | ADRA1A | P35348 | 1/20 | 0.45 |
| ▸ | OPRK1 | P41145 | 1/20 | 0.45 |
| ▸ | SLC6A3 | Q01959 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL27259195 | 0.98 | TSHR (0.56) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| SCHEMBL10654410 | 0.78 | TSHR (0.54) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| SCHEMBL29878726 | 0.77 | TSHR (0.54) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| SCHEMBL19039537 | 0.77 | TSHR (0.54) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| SCHEMBL27259240 | 0.77 | TAAR1 (0.52) | ALDH1A1AOC3TAAR1PYCR1SIGMAR1 | |
| SCHEMBL24735547 | 0.74 | TSHR (1.00) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| SCHEMBL5014268 | 0.74 | TSHR (1.00) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| Dibemethine SCHEMBL10542007 | 0.74 | ALDH1A1 (0.70) | TSHRALDH1A1AOC3CARM1PRMT6 | |
| SCHEMBL11218123 | 0.74 | TSHR (0.70) | TSHRALDH1A1AOC3TAAR1CARM1 | |
| Dibemethine SCHEMBL276863 | 0.74 | ALDH1A1 (0.70) | TSHRALDH1A1AOC3CARM1PRMT6 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11862471-B2 | Manufacturing method for semiconductor device | KIOXIA CORPORATION (JP) | 2024-01-02 | — | — | US | claimed |
| US-20220238345-A1 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE | KIOXIA CORPORATION (JP) | 2022-07-28 | — | — | US | claimed |
| US-6743737-B2 | FORMING INTEGRATED CIRCUITS; PLASMA VAPOR DEPOSITION | APPLIED MATERIALS, INC. | 2004-06-01 | — | — | US | claimed |
| US-20030054667-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2003-03-20 | — | — | US | claimed |
| US-6448187-B2 | DEPOSITING A SILICON OXIDE FILM BY OXIDATION OF SILICON COMPOUND, EXPOSING TO WATER OR A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE AND CURING | APPLIED MATERIALS, INC. | 2002-09-10 | — | — | US | claimed |
| US-6365643-B1 | Photoinitiators for cationic curing | TH. GOLDSCHMIDT AG (DE) | 2002-04-02 | — | — | US | claimed |
| US-20010026849-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2001-10-04 | — | — | US | claimed |
| US-6245690-B1 | EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM | APPLIED MATERIALS, INC. | 2001-06-12 | — | — | US | claimed |
| US-11862471-B2 | Manufacturing method for semiconductor device | KIOXIA CORPORATION (JP) | 2024-01-02 | — | — | US | disclosed |
| US-20220406611-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | KIOXIA CORPORATION (JP) | 2022-12-22 | — | — | US | disclosed |
| CN-115483101-A | Method for manufacturing semiconductor device | 铠侠股份有限公司 | 2022-12-16 | — | — | CN | disclosed |
| US-20220238345-A1 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE | KIOXIA CORPORATION (JP) | 2022-07-28 | — | — | US | disclosed |
| US-7825042-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2010-11-02 | — | — | US | disclosed |
| US-20100081291-A1 | Very Low Dielectric Constant Plasma-Enhanced CVD Films | APPLIED MATERIALS, INC. (US) | 2010-04-01 | — | — | US | disclosed |
| US-20010026849-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2001-10-04 | — | — | US | disclosed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | disclosed |
| US-6245690-B1 | EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM | APPLIED MATERIALS, INC. | 2001-06-12 | — | — | US | disclosed |
| EP-0112434-B1 | HYDROGEN BEARING SILYL CARBAMATES | UNION CARBIDE CORPORATION (US) | 1988-08-17 | — | — | EP | disclosed |
| EP-0112434-A2 | Hydrogen bearing silyl carbamates | UNION CARBIDE CORPORATION (US) | 1984-07-04 | — | — | EP | disclosed |
| US-4400526-A | Hydrogen bearing silyl carbamates | UNION CARBIDE CORPORATION (US) | 1983-08-23 | — | — | US | disclosed |