Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAPGEF4 | Q8WZA2 | 3/20 | 0.35 |
| ▸ | FFAR4 | Q5NUL3 | 3/20 | 0.35 |
| ▸ | NR3C1 | P04150 | 4/20 | 0.33 |
| ▸ | PGR | P06401 | 3/20 | 0.33 |
| ▸ | NR3C2 | P08235 | 3/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.33 |
| ▸ | LMNA | P02545 | 2/20 | 0.33 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.33 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.33 |
| ▸ | METAP2 | P50579 | 1/20 | 0.33 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.33 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.32 |
| ▸ | CYP2C19 | P33261 | 2/20 | 0.32 |
| ▸ | CA12 | O43570 | 1/20 | 0.32 |
| ▸ | CA1 | P00915 | 1/20 | 0.32 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | CA7 | P43166 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3191609 | 0.89 | KAT6A (0.35) | LMNATDP1CA12CA1CA2 | |
| SCHEMBL3181557 | 0.88 | PKM (0.34) | RAPGEF4FFAR4NR3C1PGRNR3C2 | |
| SCHEMBL3197569 | 0.86 | CA12 (0.31) | RAPGEF4FFAR4LMNATDP1CA12 | |
| SCHEMBL3190654 | 0.84 | FFAR4 (0.47) | FFAR4LMNASMN1; SMN2TDP1TSHR | |
| SCHEMBL3195145 | 0.84 | — | — | |
| SCHEMBL58785 | 0.84 | FFAR4 (0.46) | RAPGEF4FFAR4L3MBTL1LMNAMETAP2 | |
| SCHEMBL3191490 | 0.84 | HSD11B1 (0.34) | RAPGEF4FFAR4NR3C1PGRNR3C2 | |
| SCHEMBL5066003 | 0.84 | FFAR4 (0.41) | RAPGEF4FFAR4NR3C1L3MBTL1LMNA | |
| SCHEMBL3199763 | 0.83 | CYP1A2 (0.38) | RAPGEF4FFAR4NR3C1PGRNR3C2 | |
| SCHEMBL3132773 | 0.82 | CA12 (0.36) | L3MBTL1LMNASMN1; SMN2TDP1CYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | claimed |
| US-6949329-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-27 | — | — | US | claimed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | claimed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | claimed |
| US-20030017425-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-23 | — | — | US | claimed |
| EP-1676835-B1 | PROCESS FOR PRODUCING TRIARYLSULFONIUM SALT | WAKO PURE CHEM IND LTD (JP) | 2014-12-10 | — | — | EP | disclosed |
| US-8206888-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2012-06-26 | — | — | US | disclosed |
| US-20100028800-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-04 | — | — | US | disclosed |
| US-7642368-B2 | for use as acid generator in semiconductor manufacture; triarylsulfonium salt having a structure that only one aromatic ring of three is different, in a high yield and by-product inhibition; reacting a diaryl sulfoxide with an aryl Grignard reagent in presence of chlorotrialkylsilane and strong acid | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| EP-1449833-B1 | BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION | WAKO PURE CHEM IND LTD (JP) | 2009-09-09 | — | — | EP | disclosed |
| EP-1953593-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | disclosed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-7060414-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-06-13 | — | — | US | disclosed |
| US-6949329-B2 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2005-09-27 | — | — | US | disclosed |
| US-20050158657-A1 | Radiation-sensitive resin composition | SUZUKI AKI (JP) | 2005-07-21 | — | — | US | disclosed |
| US-6899989-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-05-31 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| EP-1449833-A1 | BISIMIDE COMPOUND, ACID GENERATOR AND RESIST COMPOSITION EACH CONTAINING THE SAME, AND METHOD OF FORMING PATTERN FROM THE COMPOSITION | Wako Pure Chemical Industries, Ltd. (JP) | 2004-08-25 | — | — | EP | disclosed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20030017425-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) | 2003-01-23 | — | — | US | disclosed |