SCHEMBL58785

SCHEMBL58785

Cc1cc(C)c([S+](c2ccccc2)c2ccccc2)c(C)c1.O=S(=O)([O-])c1ccccc1

nearest known ligand 0.46

Known targets — ChEMBL curated mechanism

CHRNA1CHRNB1CHRNDCHRNECHRNG

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
FFAR4 Q5NUL3 5/20 0.46
LMNA P02545 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
METAP2 P50579 1/20 0.39
RAPGEF4 Q8WZA2 4/20 0.39
ALDH1A1 P00352 2/20 0.38
POLB P06746 1/20 0.38
MAPT P10636 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
HSD11B1 P28845 1/20 0.36
GAA P10253 1/20 0.34
CYTH2 Q99418 1/20 0.34
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
KDM4E B2RXH2 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2512387 0.95 RAPGEF4 (0.45) FFAR4LMNATDP1RAPGEF4ALDH1A1
SCHEMBL6282642 0.91 FFAR4 (0.47) FFAR4LMNATDP1ALDH1A1MAPT
SCHEMBL3190654 0.91 FFAR4 (0.47) FFAR4LMNATDP1SMN1; SMN2GAA
SCHEMBL5066003 0.90 FFAR4 (0.41) FFAR4LMNATDP1METAP2RAPGEF4
SCHEMBL547725 0.87 CYP1A2 (0.40) FFAR4RAPGEF4ALDH1A1MAPTHSD11B1
SCHEMBL2512390 0.86 FFAR4 (0.36) FFAR4LMNATDP1RAPGEF4ALDH1A1
SCHEMBL5415913 0.85 CYP1A2 (0.44) FFAR4LMNARAPGEF4ALDH1A1POLB
SCHEMBL2284440 0.85 CYTH2 (0.47) LMNATDP1ALDH1A1POLBMAPT
Trifluoromethanesulfonic Acid SCHEMBL546940 0.84 GPR3 (0.43) FFAR4LMNAMETAP2RAPGEF4MAPT
SCHEMBL424812 0.84 CYP1A2 (0.40) FFAR4LMNARAPGEF4MAPTMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 207 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8759415-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-06-24 US claimed
US-20120291668-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-22 US claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20080174051-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-24 US claimed
US-20080169268-A1 PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-17 US claimed
EP-1938149-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS International Business Machines Corporation (US) 2008-07-02 EP claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
WO-2007039346-A2 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-04-12 WO claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
CN-122085599-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-122085598-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
US-20250216790-A1 MATERIALS AND METHODS FOR FORMING PATTERNED MASK ON SUBSTRATE GEMINATIO, INC., 2025-07-03 US disclosed
US-20250216783-A1 ANTI-SPACER MASKING PROCESS USING SECOND SWITCHABLE POLYMER TOKYO ELECTRON LTD (JP) 2025-07-03 US disclosed
WO-2003021357-A1 FREE-ACID CONTAINING POLYMERS AND THEIR USE IN PHOTORESISTS ARCH SPECIALTY CHEMICALS, INC. (US) 2003-03-13 WO disclosed
US-20020197558-A1 Photoacid generators for use in photoresist compositions ARCH SPECIALTY CHEMICALS, INC. 2002-12-26 US disclosed
WO-2002082184-A1 SILICON-CONTAINING ACETAL PROTECTED POLYMERS AND PHOTORESISTS COMPOSITIONS THEREOF ARCH SPECIALTY CHEMICALS, INC. (US) 2002-10-17 WO disclosed
WO-2002082185-A1 PERFLUOROALKYLSULFONIC ACID COMPOUNDS FOR PHOTORESISTS ARCH SPECIALTY CHEMICALS, INC. (US) 2002-10-17 WO disclosed