Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP2D6 | P10635 | 1/20 | 0.39 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 2/20 | 0.38 |
| ▸ | CA2 | P00918 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | MIF | P14174 | 4/20 | 0.35 |
| ▸ | TAS1R3 | Q7RTX0 | 1/20 | 0.34 |
| ▸ | TAS1R1 | Q7RTX1 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.33 |
| ▸ | GAA | P10253 | 2/20 | 0.33 |
| ▸ | MEN1 | O00255 | 2/20 | 0.33 |
| ▸ | TAAR1 | Q96RJ0 | 1/20 | 0.31 |
| ▸ | ALDH5A1 | P51649 | 1/20 | 0.31 |
| ▸ | ABAT | P80404 | 1/20 | 0.31 |
| ▸ | MGAM | O43451 | 1/20 | 0.30 |
| ▸ | SI | P14410 | 1/20 | 0.30 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.30 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.30 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Indene SCHEMBL3169287 | 0.92 | ALDH1A1 (0.44) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL9444068 | 0.86 | ALDH1A1 (0.52) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL200671 | 0.86 | ALDH1A1 (0.52) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL29813684 | 0.86 | ALDH1A1 (0.52) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL16297370 | 0.86 | CA1 (0.47) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL4021084 | 0.86 | CYP1A2 (0.39) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL2189427 | 0.85 | CYP2D6 (0.32) | CYP2D6CYP2C19 | |
| Indene SCHEMBL8625326 | 0.85 | ALDH1A1 (0.50) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL14637127 | 0.84 | CA1 (0.38) | CYP2D6CYP2C19CA1CA2ALDH1A1 | |
| Indene SCHEMBL3761122 | 0.83 | CYP2D6 (0.31) | CYP2D6CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9316915-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-19 | — | — | US | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-20150147697-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-28 | — | — | US | disclosed |
| US-20150147698-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-05-28 | — | — | US | disclosed |
| US-8574817-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-05 | — | — | US | disclosed |
| EP-2146246-B1 | Negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-28 | — | — | EP | disclosed |
| EP-1791025-B1 | Negative resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-06-12 | — | — | EP | disclosed |
| US-20130084529-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-04 | — | — | US | disclosed |
| US-8343694-B2 | Photomask blank, resist pattern forming process, and photomask preparation process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-01-01 | — | — | US | disclosed |
| EP-2146246-A1 | Negative resist composition and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-01-20 | — | — | EP | disclosed |
| US-6916591-B2 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-07-12 | — | — | US | disclosed |
| US-20040167322-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-08-26 | — | — | US | disclosed |
| US-20040166432-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-08-26 | — | — | US | disclosed |
| US-6713612-B2 | Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-30 | — | — | US | disclosed |
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-20040033440-A1 | Photoacid generators, chemically amplified positive resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-6689530-B2 | ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-10 | — | — | US | disclosed |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-04 | — | — | US | disclosed |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-25 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | POLL, PIM3, VEGFA | CYP2D6 2050/4885CYP2C19 1664/4885CA1 2908/4885 |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, DNMT3A, PIM3 | CYP2D6 891/4885CYP2C19 545/4885CA1 3621/4885 |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | CCNH, PAH, POLH | CYP2D6 418/4885CYP2C19 491/4885CA1 2097/4885 |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | CACNA1A, KCNA1, POLL | CYP2D6 324/4885CYP2C19 1707/4885CA1 3283/4885 |
| US-20040167322-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | POLL, VEGFA, PIM3 | CYP2D6 1044/4885CYP2C19 1030/4885CA1 3477/4885 |
| US-20040166432-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, POLL, PIM3 | CYP2D6 1159/4885CYP2C19 774/4885CA1 3862/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.