SCHEMBL3149802

SCHEMBL3149802

CCOCCC(OCC)O[SiH2]CCCNC(N)=O

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.36
ALDH1A1 P00352 1/20 0.31
HPGD P15428 2/20 0.31
NPC1 O15118 2/20 0.31
HTT P42858 1/20 0.31
RAB9A P51151 1/20 0.31
EPHX1 P07099 1/20 0.31
TP53 P04637 1/20 0.30
GAA P10253 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
POLB P06746 1/20 0.30
KMT2A Q03164 2/20 0.30
MEN1 O00255 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20592353 0.83 EPHX1 (0.34) TSHREPHX1
SCHEMBL3142448 0.79 TSHR (0.31) TSHR
SCHEMBL3150621 0.77 TSHR (0.34) TSHRALDH1A1
SCHEMBL28909954 0.75 EPHX1 (0.36) TSHREPHX1
SCHEMBL29045732 0.75
SCHEMBL20742801 0.74 TSHR (0.33) TSHRALDH1A1
SCHEMBL1161353 0.73 ALDH1A1 (0.33) TSHRALDH1A1KMT2AL3MBTL1
SCHEMBL20724724 0.72 TSHR (0.56) TSHRALDH1A1HPGDNPC1HTT
SCHEMBL29706638 0.71
SCHEMBL29091809 0.71 EPHX1 (0.45) EPHX1KMT2AMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100338-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN 旭化成株式会社 2026-05-15 WO disclosed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-09 US disclosed
US-12504688-B2 Negative photosensitive resin composition and method for manufacturing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-23 US disclosed
US-20250370339-A1 NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR MANUFACTURING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-12-04 US disclosed
WO-2024225072-A1 PHOTOSENSITIVE RESIN COMPOSITION, PRODUCTION METHOD FOR CURED RELIEF PATTERN, AND CURED FILM 旭化成株式会社 2024-10-31 WO disclosed
WO-2024210063-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN, CURED FILM, AND SEMICONDUCTOR DEVICE 旭化成株式会社 2024-10-10 WO disclosed
US-20240329525-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-10-03 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
WO-2024095927-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME 旭化成株式会社 2024-05-10 WO disclosed
US-20200409263-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-12-31 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
US-20180373147-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2018-12-27 US disclosed
US-20170102613-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING HARDENED RELIEF PATTERN, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE ASAHI KASEI E-MATERIALS CORPORATION (JP) 2017-04-13 US disclosed
US-9575410-B2 Photosensitive resin composition, method for producing hardened relief pattern, semiconductor device and display device ASAHI KASEI E-MATERIALS CORPORATION (JP) 2017-02-21 US disclosed
US-20140349222-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING HARDENED RELIEF PATTERN, SEMICONDUCTOR DEVICE AND DISPLAY DEVICE ASAHI KASEI E-MATERIALS CORPORATION (JP) 2014-11-27 US disclosed
US-7687208-B2 Positive photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2010-03-30 US disclosed
US-20090202794-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-08-13 US disclosed
EP-2056163-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION Asahi Kasei EMD Corporation (JP) 2009-05-06 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 TSHR 3312/4885ALDH1A1 3316/4885HPGD 3226/4885
US-20260099093-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN USING SAME, AND METHOD FOR PRODUCING POLYIMIDE FILM USING SAME CD79B, ITGA1, PTK2 TSHR 2388/4885ALDH1A1 413/4885HPGD 3552/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.