SCHEMBL31565026

SCHEMBL31565026

C/C(=N/OS(=O)(=O)c1ccc(C)cc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.46
RECQL P46063 1/20 0.45
MEN1 O00255 2/20 0.45
KMT2A Q03164 2/20 0.45
MAPK1 P28482 2/20 0.45
L3MBTL1 Q9Y468 2/20 0.45
KDM4E B2RXH2 2/20 0.45
HTT P42858 2/20 0.45
MAPT P10636 2/20 0.44
ALDH1A1 P00352 6/20 0.43
PPARG P37231 1/20 0.43
PPARA Q07869 1/20 0.43
POLB P06746 1/20 0.43
CASP3 P42574 1/20 0.43
SENP8 Q96LD8 1/20 0.43
SENP7 Q9BQF6 1/20 0.43
SENP6 Q9GZR1 1/20 0.43
TP53 P04637 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
KEAP1 Q14145 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL92088 1.00 LMNA (0.46) LMNARECQLMEN1KMT2AMAPK1
Nitrous Acid SCHEMBL6396171 0.96 LMNA (0.43) LMNARECQLMEN1KMT2AMAPK1
Nitrous Acid SCHEMBL6396175 0.96 LMNA (0.43) LMNARECQLMEN1KMT2AMAPK1
SCHEMBL13461573 0.91 SMN1; SMN2 (0.42) LMNAMEN1KMT2AMAPK1L3MBTL1
SCHEMBL212829 0.90 MAPT (0.53) LMNARECQLKMT2AMAPK1L3MBTL1
SCHEMBL13969947 0.90 MAPT (0.53) LMNARECQLKMT2AMAPK1L3MBTL1
SCHEMBL13033693 0.88 STAT3 (0.51) LMNAMEN1KMT2AMAPK1L3MBTL1
SCHEMBL12629324 0.86 ALDH1A1 (0.47) LMNARECQLMEN1KMT2AMAPK1
SCHEMBL7296406 0.85 MAPT (0.53) MEN1KMT2AKDM4EMAPTALDH1A1
SCHEMBL7296409 0.85 MAPT (0.53) MEN1KMT2AKDM4EMAPTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250123563-A1 POLYMER, RESIST COMPOSITION COMPRISING THE SAME AND METHOD OF FORMING PATTERN USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-04-17 US disclosed