SCHEMBL3245709

SCHEMBL3245709

C=CCn1nnnc1O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9441451 0.76
SCHEMBL3244004 0.76
SCHEMBL9367428 0.74 RAB9A (0.46)
SCHEMBL22245499 0.74
SCHEMBL9547360 0.74
SCHEMBL1223690 0.74
SCHEMBL1325460 0.72 RAB9A (0.45)
SCHEMBL16199152 0.72 RAB9A (0.41)
SCHEMBL10475166 0.71 LMNA (0.48)
SCHEMBL9367407 0.71 RAB9A (0.44)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102585704-B Chemical mechanical polishing slurry composition and use it to manufacture the method for semiconducter device SOULBRAIN CO. (KR) 2016-02-24 CN claimed
US-8840798-B2 Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same SOULBRAIN CO., LTD. (KR) 2014-09-23 US claimed
CN-102585704-A Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same SOULBRAIN CO LTD 2012-07-18 CN claimed
US-20120156874-A1 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME SOULBRAIN CO., LTD (KR) 2012-06-21 US claimed
US-20100176335-A1 CMP Slurry Composition for Copper Damascene Process TECHNO SEMICHEM CO., LTD. (KR) 2010-07-15 US claimed
US-20100015807-A1 Chemical Mechanical Polishing Composition for Copper Comprising Zeolite TECHNO SEMICHEM CO., LTD. (KR) 2010-01-21 US claimed
US-20090298289-A1 Chemical Mechanical Polishing Composition for Copper Comprising Zeolite TECHNO SEMICHEM CO., LTD. (KR) 2009-12-03 US claimed
CN-101541913-A Zeolite-containing chemical mechanical polishing composition for copper TECHNO SEMICHEM CO LTD (KR) 2009-09-23 CN claimed
WO-2008150038-A1 CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS TECHNO SEMICHEM CO., LTD. (KR) 2008-12-11 WO claimed
WO-2008078909-A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE TECHNO SEMICHEM CO., LTD. (KR) 2008-07-03 WO claimed
WO-2007114583-A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE TECHNO SEMICHEM CO., LTD. (KR) 2007-10-11 WO claimed
CN-102585704-B Chemical mechanical polishing slurry composition and use it to manufacture the method for semiconducter device SOULBRAIN CO. (KR) 2016-02-24 CN disclosed
US-8840798-B2 Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same SOULBRAIN CO., LTD. (KR) 2014-09-23 US disclosed
CN-102585704-A Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same SOULBRAIN CO LTD 2012-07-18 CN disclosed
US-20120156874-A1 CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME SOULBRAIN CO., LTD (KR) 2012-06-21 US disclosed
US-20090298289-A1 Chemical Mechanical Polishing Composition for Copper Comprising Zeolite TECHNO SEMICHEM CO., LTD. (KR) 2009-12-03 US disclosed
CN-101541913-A Zeolite-containing chemical mechanical polishing composition for copper TECHNO SEMICHEM CO LTD (KR) 2009-09-23 CN disclosed
WO-2008150038-A1 CMP SLURRY COMPOSITION FOR COPPER DAMASCENE PROCESS TECHNO SEMICHEM CO., LTD. (KR) 2008-12-11 WO disclosed
WO-2008078909-A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE TECHNO SEMICHEM CO., LTD. (KR) 2008-07-03 WO disclosed
WO-2007114583-A1 CHEMICAL MECHANICAL POLISHING COMPOSITION FOR COPPER COMPRISING ZEOLITE TECHNO SEMICHEM CO., LTD. (KR) 2007-10-11 WO disclosed