SCHEMBL3263283

SCHEMBL3263283

C=CC[Sn](CC=C)(CC=C)c1ccsc1[Sn](CC=C)(CC=C)CC=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7684858 0.65 ALDH1A1 (0.40)
SCHEMBL371289 0.65 ALDH1A1 (0.31)
SCHEMBL5140347 0.63
SCHEMBL9752814 0.61 ALDH1A1 (0.30)
SCHEMBL5898869 0.59 ADRB2 (0.41)
SCHEMBL4619452 0.58 ALDH1A1 (0.36)
SCHEMBL8509078 0.55
SCHEMBL4700367 0.55
SCHEMBL2882496 0.54
SCHEMBL703693 0.54 ALDH1A1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-2010031157-A MAGNETICALLY AND OPTICALLY ACTIVE POLYTHIOPHENE DERIVATIVE AND METHOD FOR PRODUCING THE SAME UNIV OF TSUKUBA 2010-02-12 JP disclosed
EP-1877462-A1 SEMICONDUCTORS CONTAINING PERFLUOROETHER ACYL OLIGOTHIOPHENE COMPOUNDS 3M Innovative Properties Company (US) 2008-01-16 EP disclosed
US-7276395-B2 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY (US) 2007-10-02 US disclosed
US-7211679-B2 Perfluoroether acyl oligothiophene compounds 3M INNOVATIVE PROPERTIES COMPANY (US) 2007-05-01 US disclosed
US-7151276-B2 Semiconductors containing perfluoroether acyl oligothiophene compounds 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-12-19 US disclosed
WO-2006098859-A1 SEMICONDUCTORS CONTAINING PERFLUOROETHER ACYL OLIGOTHIOPHENE COMPOUNDS 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-09-21 WO disclosed
US-20060202191-A1 Semiconductors containing perfluoroether acyl oligothiohpene compounds 3M INNOVATIVE PROPERTIES COMPANY 2006-09-14 US disclosed
US-20060205172-A1 Perfluoroether acyl oligothiophene compounds 3M INNOVATIVE PROPERTIES COMPANY 2006-09-14 US disclosed
EP-1654248-A1 ACENE-THIOPHENE SEMICONDUCTORS 3M Innovative Properties Company (US) 2006-05-10 EP disclosed
US-20060033086-A1 Depositing a gate electrode material on the substrate;depositing a gate dielectric on the gate electrode material;depositing an organic semiconductor layer comprising acene-thiophene compounds, providing a source electrode and a drain electrode contiguous to the organic semiconductor layer GERLACH CHRISTOPHER P 2006-02-16 US disclosed
US-6998068-B2 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY (US) 2006-02-14 US disclosed
WO-2005019198-A1 ACENE-THIOPHENE SEMICONDUCTORS 3M INNOVATIVE PROPERTIES COMPANY (US) 2005-03-03 WO disclosed
US-20050035333-A1 Acene-thiophene semiconductors 3M INNOVATIVE PROPERTIES COMPANY 2005-02-17 US disclosed