SCHEMBL3290634

SCHEMBL3290634

CC(C)N=C(NC(C)C)C(=O)[O-].CC(C)N=C(NC(C)C)C(=O)[O-].CC(C)N=C(NC(C)C)C(=O)[O-].[La+3]

nearest known ligand 0.34

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.34
GAA P10253 1/20 0.34
CA12 O43570 1/20 0.32
CA1 P00915 1/20 0.32
CA2 P00918 1/20 0.32
MMP1 P03956 1/20 0.32
MMP2 P08253 1/20 0.32
MMP9 P14780 1/20 0.32
MMP8 P22894 1/20 0.32
CA9 Q16790 1/20 0.32
TSHR P16473 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2157672 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL2941025 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL2944909 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL1785154 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL17536213 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
Lithium Ion SCHEMBL1005375 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL3290453 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
SCHEMBL3926609 0.96 CA12 (0.32) ALDH1A1GAACA12CA1CA2
Carbon Monoxide SCHEMBL3924423 0.92 CA12 (0.30) CA12CA1CA2MMP1MMP2
SCHEMBL336859 0.77 ALDH1A1 (0.37) ALDH1A1GAACA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2643494-A1 METHOD OF FORMING CONFORMAL BARRIER LAYERS FOR PROTECTION OF THERMOELECTRIC MATERIALS Corning Incorporated (US) 2013-10-02 EP disclosed
WO-2012071173-A1 METHOD OF FORMING CONFORMAL BARRIER LAYERS FOR PROTECTION OF THERMOELECTRIC MATERIALS CORNING INCORPORATED (US) 2012-05-31 WO disclosed
US-20120128867-A1 METHOD OF FORMING CONFORMAL BARRIER LAYERS FOR PROTECTION OF THERMOELECTRIC MATERIALS CORNING INCORPORATED 2012-05-24 US disclosed
US-7728376-B2 Semiconductor memory device HITACHI, LTD. (JP) 2010-06-01 US disclosed
US-20070228427-A1 Semiconductor memory device HITACHI, LTD. 2007-10-04 US disclosed