SCHEMBL3295646

SCHEMBL3295646

CCCC[SiH2]Oc1ccc(C)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.38
DRD2 P14416 3/20 0.36
DRD4 P21917 3/20 0.36
DRD3 P35462 3/20 0.36
HTT P42858 1/20 0.34
MITF O75030 1/20 0.34
ALDH1A1 P00352 1/20 0.34
LMNA P02545 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
LTA4H P09960 2/20 0.33
CYP3A4 P08684 1/20 0.33
TSHR P16473 1/20 0.33
TEAD4 Q15561 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
PTGES O14684 1/20 0.33
ALOX5 P09917 1/20 0.33
PPARG P37231 1/20 0.33
PPARA Q07869 1/20 0.33
MAPT P10636 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705034 0.82 LTA4H (0.47) DRD2DRD3HTTALDH1A1LMNA
SCHEMBL8709219 0.73 NPC1 (0.37) HTTALDH1A1SMN1; SMN2MAPTHPGD
SCHEMBL109524 0.72 DRD2 (0.63) DRD2DRD4DRD3LTA4HCYP3A4
Butane SCHEMBL14858436 0.70 DRD2 (0.61) DRD2DRD4DRD3LTA4HCYP3A4
P-Xylene SCHEMBL6129268 0.69 ACHE (0.57) ACHEHTTALDH1A1TSHRHPGD
P-Xylene SCHEMBL28089202 0.69 ACHE (0.57) ACHEHTTALDH1A1LMNASMN1; SMN2
SCHEMBL3295650 0.69 CYP2C19 (0.38) DRD2DRD4ALDH1A1SMN1; SMN2TSHR
P-Xylene SCHEMBL27374298 0.69 TSHR (0.50) ACHEDRD2DRD4DRD3HTT
SCHEMBL6377570 0.68 NR5A1 (0.64) DRD2DRD4DRD3LTA4HCYP3A4
SCHEMBL705351 0.68 LTA4H (0.41) HTTLMNALTA4HTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-7736837-B2 Antireflective coating composition based on silicon polymer AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-06-15 US disclosed
US-20100093969-A1 Process for making siloxane polymers ZHANG RUZHI 2010-04-15 US disclosed
EP-2132253-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ Electronic Materials USA Corp. (US) 2009-12-16 EP disclosed
EP-2129733-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ Electronic Materials USA Corp. (US) 2009-12-09 EP disclosed
EP-2035518-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ Electronic Materials USA Corp. (US) 2009-03-18 EP disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed