SCHEMBL705351

SCHEMBL705351

CCC[SiH2]Oc1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.41
CA4 P22748 1/20 0.39
TSHR P16473 1/20 0.36
KCNA3 P22001 1/20 0.36
CHRNB2 P17787 2/20 0.35
CHRNB4 P30926 2/20 0.35
CHRNA3 P32297 2/20 0.35
CHRNA7 P36544 2/20 0.35
CHRNA4 P43681 2/20 0.35
L3MBTL1 Q9Y468 1/20 0.34
LMNA P02545 1/20 0.34
HTT P42858 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705034 0.87 LTA4H (0.47) LTA4HCA4KCNA3LMNAHTT
SCHEMBL28728730 0.85 LTA4H (0.47) LTA4HTSHRKCNA3LMNAHTT
SCHEMBL707316 0.81 CA4 (0.42) LTA4HCA4TSHRKCNA3CHRNB2
Butane SCHEMBL2501351 0.76 LTA4H (0.43) LTA4HCA4TSHRKCNA3CHRNB2
SCHEMBL31187705 0.74 LTA4H (0.35) LTA4HCA4LMNA
SCHEMBL28728849 0.74 LTA4H (0.52) LTA4HKCNA3CHRNB2CHRNB4CHRNA3
SCHEMBL28459964 0.72 CA1 (0.52) CA4TSHRL3MBTL1LMNAHTT
SCHEMBL705340 0.72 HRH1 (0.43) LMNAHTT
SCHEMBL27809250 0.71 TAAR1 (0.44) LTA4HCA4TSHRKCNA3
SCHEMBL28653063 0.71 LMNA (0.34) LTA4HCA4L3MBTL1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023190168-A1 CURED FILM FORMING METHOD, METHOD FOR MANUFACTURING SUBSTRATE FOR IMPRINT MOLD, METHOD FOR MANUFACTURING IMPRINT MOLD, METHOD FOR MANUFACTURING UNEVEN STRUCTURE, PATTERN FORMING METHOD, HARD MASK FORMING METHOD, INSULATING FILM FORMING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 大日本印刷株式会社 2023-10-05 WO disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-0529583-B1 3-(Vinylphenyloxy) propylsilane compound SHINETSU CHEMICAL CO (JP) 1997-11-26 EP disclosed
CN-1111601-A Method for producing refractory molded article and binder for refractory molded article JAPAN CASTING TECHNOLOGY CONSU (JP) 1995-11-15 CN disclosed