SCHEMBL330600

SCHEMBL330600

C[Si](C)(Cl)C[Si](C)(C)Cl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7556421 0.82
SCHEMBL996306 0.82
SCHEMBL1271010 0.82
SCHEMBL9392907 0.82 ALDH1A1 (0.39)
SCHEMBL996044 0.82 ALDH1A1 (0.31)
SCHEMBL4732962 0.71
SCHEMBL79453 0.70
SCHEMBL124324 0.70
SCHEMBL149083 0.70 ALDH1A1 (0.46)
SCHEMBL331729 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250270096-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILM VERSUM MAT US LLC (US) 2025-08-28 US claimed
US-12297115-B2 High temperature atomic layer deposition of silicon-containing film VERSUM MATERIALS US, LLC (US) 2025-05-13 US claimed
US-20210380418-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILM VERSUM MATERIALS US, LLC (US) 2021-12-09 US claimed
CN-112969817-A High temperature atomic layer deposition of silicon-containing films 弗萨姆材料美国有限责任公司 2021-06-15 CN claimed
WO-2020072874-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-20070181873-A1 Organic-inorganic hybrid polymer and organic insulator composition having the same and methods thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-09 US claimed
EP-4673508-A1 TWO-PART ADDITION CURE THERMAL CONTROL COATING Momentive Performance Materials Inc. (US) 2026-01-07 EP disclosed
WO-2025229081-A1 ORGANOAMINO-CARBOSILANES AND METHODS FOR DEPOSITING SILICONCONTAINING FILMS USING SAME MERCK PATENT GMBH (DE) 2025-11-06 WO disclosed
US-20250270096-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON-CONTAINING FILM VERSUM MAT US LLC (US) 2025-08-28 US disclosed
US-12297115-B2 High temperature atomic layer deposition of silicon-containing film VERSUM MATERIALS US, LLC (US) 2025-05-13 US disclosed
CN-119951563-A M@ZSM-5 based composite catalyst and preparation method and application thereof 中国科学院过程工程研究所 2025-05-09 CN disclosed
CN-119951412-A Continuous catalytic cracking device and method for organic silicon high-boiling-point substances 中国科学院过程工程研究所 2025-05-09 CN disclosed
CN-119951567-A Co@HZ/B catalyst and preparation method and application thereof 中国科学院过程工程研究所 2025-05-09 CN disclosed
US-20070181873-A1 Organic-inorganic hybrid polymer and organic insulator composition having the same and methods thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-08-09 US disclosed
US-20070111967-A1 Organosilicon compounds and their use TAKEDA PHARMACEUTICAL COMPANY LIMITED (JP) 2007-05-17 US disclosed
US-20070111967-A1 Organosilicon compounds and their use TAKEDA PHARMACEUTICAL COMPANY LIMITED (JP) 2007-05-17 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
EP-1648906-A1 ORGANOSILICON COMPOUNDS AND THEIR USE Paradigm Therapeutics Limited (GB) 2006-04-26 EP disclosed
WO-2005005443-A1 ORGANOSILICON COMPOUNDS AND THEIR USE PARADIGM THERAPEUTICS LTD. (GB) 2005-01-20 WO disclosed
US-4435587-A REACTION OF A SILICON HALIDE COMPOUND WITH AN ISOCYANATE OR CYANATE MATSUMOTO SEIYAKU KOGYO KABUSHIKI KAISHA (JP) 1984-03-06 US disclosed