SCHEMBL3324739

SCHEMBL3324739

CCN(CC)c1c(CCC(C)C)cccc1C(=O)O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CLCN2 P51788 1/20 0.39
HMGB1 P09429 1/20 0.39
FOLH1 Q04609 3/20 0.38
ALDH1A1 P00352 3/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
KDM4E B2RXH2 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TDP1 Q9NUW8 1/20 0.36
BRS3 P32247 1/20 0.36
ABCC1 P33527 1/20 0.35
PTPN1 P18031 1/20 0.35
GPR35 Q9HC97 1/20 0.35
KCNA5 P22460 2/20 0.34
TP53 P04637 1/20 0.34
HTT P42858 1/20 0.34
SCN1A P35498 1/20 0.34
SCN2A Q99250 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2889630 0.85 ALDH1A1 (0.43) CLCN2HMGB1FOLH1ALDH1A1KDM4E
SCHEMBL43874 0.84 CLCN2 (0.49) CLCN2HMGB1FOLH1ALDH1A1MEN1
SCHEMBL29155872 0.82 SCN1A (0.44) CLCN2HMGB1FOLH1ALDH1A1MEN1
SCHEMBL1683151 0.81 SMN1; SMN2 (0.47) CLCN2HMGB1ALDH1A1MEN1KMT2A
SCHEMBL442094 0.79 FOLH1 (0.59) CLCN2HMGB1FOLH1ALDH1A1KMT2A
SCHEMBL9338483 0.78 FOLH1 (0.49) CLCN2HMGB1FOLH1ALDH1A1KDM4E
SCHEMBL5172249 0.78 HMGB1 (0.63) CLCN2HMGB1FOLH1ALDH1A1KMT2A
SCHEMBL568542 0.78 HMGB1 (0.63) CLCN2HMGB1FOLH1ALDH1A1KMT2A
SCHEMBL3324734 0.78 TP53 (0.39) CLCN2ALDH1A1MEN1KMT2ASMN1; SMN2
SCHEMBL7635318 0.77 G6PD (0.51) CLCN2HMGB1FOLH1ALDH1A1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022064917-A1 CURED PRODUCT PRODUCTION METHOD, LAMINATE PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD 富士フイルム株式会社 2022-03-31 WO disclosed
EP-2131423-B1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO LTD (JP) 2017-11-15 EP disclosed
US-9105929-B2 Negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-11 US disclosed
US-8927147-B2 Negative electrode base member KANTO GAKUIN SCHOOL CORPORATION (JP) 2015-01-06 US disclosed
EP-2472655-B1 Negative electrode base member TOKYO OHKA KOGYO CO LTD (JP) 2014-03-12 EP disclosed
US-8551651-B2 Secondary cell having negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-08 US disclosed
US-20130252099-A1 NEGATIVE ELECTRODE BASE MEMBER KANTO GAKUIN UNIVERSITY SURFACE ENGINEERING RESEARCH INSTITUTE (JP) 2013-09-26 US disclosed
US-20130252098-A1 NEGATIVE ELECTRODE BASE MEMBER KANTO GAKUIN UNIVERSITY SURFACE ENGINEERING RESEARCH INSTITUTE (JP) 2013-09-26 US disclosed
EP-2472655-A1 Negative electrode base member Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-07-04 EP disclosed
US-20100119939-A1 NEGATIVE ELECTRODE BASE MEMBER TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
EP-2131423-A1 NEGATIVE ELECTRODE BASE MEMBER Tokyo Ohka Kogyo Co., Ltd. (JP) 2009-12-09 EP disclosed