SCHEMBL3337639

SCHEMBL3337639

CCc1cn(CC)c([Ru]c2c(CC)c(CC)cn2CC)c1CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11650532 0.76 PGR (0.32) —
SCHEMBL3344965 0.70 KDM4E (0.30) —
SCHEMBL23957853 0.64 MAPK1 (0.43) —
SCHEMBL10654844 0.58 CYP19A1 (0.56) —
SCHEMBL3342174 0.58 — —
SCHEMBL166573 0.56 GABRA1 (0.41) —
SCHEMBL29619533 0.56 GABRA1 (0.41) —
SCHEMBL12659546 0.55 PDE10A (0.33) —
SCHEMBL12659542 0.55 BRD4 (0.36) —
SCHEMBL3266092 0.55 KDM4E (0.32) —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9418890-B2 Method for tuning a deposition rate during an atomic layer deposition process APPLIED MATERIALS, INC. (US) 2016-08-16 — — US disclosed
US-20140248772-A1 METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS APPLIED MATERIALS, INC. (US) 2014-09-04 — — US disclosed
US-7682946-B2 flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) APPLIED MATERIALS, INC. (US) 2010-03-23 — — US disclosed
US-20070128864-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-06-07 — — US disclosed
US-20070119371-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-05-31 — — US disclosed
US-20070119370-A1 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION APPLIED MATERIALS, INC. 2007-05-31 — — US disclosed
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