Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3266092 | 0.73 | KDM4E (0.32) | KDM4EALDH1A1MAPK1 | |
| SCHEMBL2969372 | 0.71 | KDM4E (0.34) | KDM4EALDH1A1MAPK1 | |
| SCHEMBL2962188 | 0.71 | GABRA1 (0.34) | KDM4EALDH1A1MAPK1 | |
| SCHEMBL3338870 | 0.71 | CNR2 (0.33) | — | |
| SCHEMBL3337639 | 0.70 | — | — | |
| SCHEMBL23839890 | 0.67 | GABRA1 (0.45) | KDM4EALDH1A1MAPK1 | |
| SCHEMBL12727081 | 0.65 | GABRA1 (0.30) | — | |
| SCHEMBL13677546 | 0.64 | POLB (0.46) | KDM4E | |
| SCHEMBL18951893 | 0.64 | PIK3CD (0.40) | KDM4EALDH1A1MAPK1 | |
| SCHEMBL15676807 | 0.61 | BACE1 (0.48) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-7682946-B2 | flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) | APPLIED MATERIALS, INC. (US) | 2010-03-23 | — | — | US | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |