SCHEMBL3344601

SCHEMBL3344601

CCO[Si](C)(C)C(CC)OC(C)=O

nearest known ligand 0.34

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.34
ALDH1A1 P00352 1/20 0.34
LMNA P02545 1/20 0.34
HSD17B10 Q99714 1/20 0.34
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
CHRM1 P11229 1/20 0.31
TBXA2R P21731 1/20 0.31
GALR3 O60755 1/20 0.31
MAPT P10636 1/20 0.31
BLM P54132 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8628389 0.83 TSHR (0.37) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL1551132 0.82 THRB (0.37) TSHRALDH1A1
SCHEMBL559259 0.82 TSHR (0.36) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL28529148 0.82 TSHR (0.36) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL139100 0.78 TSHR (0.35) TSHRALDH1A1SMN1; SMN2
SCHEMBL3338084 0.78 TSHR (0.41) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL28489600 0.77 ALDH1A1 (0.32) TSHRALDH1A1LMNAHSD17B10
SCHEMBL15091383 0.75 TSHR (0.37) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL10889597 0.75 TSHR (0.37) TSHRALDH1A1LMNAHSD17B10CHRM2
SCHEMBL8968296 0.75 TSHR (0.37) TSHRALDH1A1LMNAHSD17B10CHRM2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-5679821-A Process for preparing organosilicon compound TOAGOSEI CO., LTD. (JP) 1997-10-21 US disclosed