SCHEMBL3338087

SCHEMBL3338087

CCO[Si](C)(C)CCOC(C)=O

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.48
TSHR P16473 1/20 0.48
LMNA P02545 1/20 0.46
HSD17B10 Q99714 1/20 0.46
CHRM5 P08912 2/20 0.39
CHRM1 P11229 2/20 0.39
CHRM3 P20309 2/20 0.39
PGR P06401 1/20 0.39
CHRM2 P08172 1/20 0.39
CHRM4 P08173 1/20 0.39
HTR1A P08908 1/20 0.39
CHRNB2 P17787 1/20 0.39
TBXA2R P21731 1/20 0.39
CHRNB4 P30926 1/20 0.39
CHRNA3 P32297 1/20 0.39
CHRNA7 P36544 1/20 0.39
CHRNA4 P43681 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
CHRNA10 Q9GZZ6 1/20 0.39
CHRNA9 Q9UGM1 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3344605 0.88 ALDH1A1 (0.52) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL13151103 0.86 ALDH1A1 (0.48) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL3341329 0.83 ALDH1A1 (0.48) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL13151078 0.82 ALDH1A1 (0.39) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL340146 0.81 THRB (0.55) ALDH1A1TSHRLMNAHSD17B10GAA
SCHEMBL66308 0.81 ALDH1A1 (0.50) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL333267 0.79 CA12 (0.30)
SCHEMBL2409855 0.78 ALDH1A1 (0.50) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL13151001 0.78 ALDH1A1 (0.43) ALDH1A1TSHRLMNAHSD17B10CHRM5
SCHEMBL3335756 0.78 ALDH1A1 (0.43) ALDH1A1TSHRLMNAHSD17B10CHRM5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8557943-B2 Nanostructured organosilicates from thermally curable block copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-10-15 US disclosed
US-20120277339-A1 Nanostructured Organosilicates from Thermally Curable Block Copolymers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-01 US disclosed
US-7799469-B2 electrolytic salt e.g. LiPF6 is dissolved in an organic solvent ( ethylene carbonate, vinyline carbonate, diethyl carbonate) and a silicon compound additive; increase of internal resistance in storage at high temperature; stable power souce for hybrid or battery cars using electrical power; green energy DENSO CORPORATION (JP) 2010-09-21 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-20070243470-A1 electrolytic salt e.g. LiPF6 is dissolved in an organic solvent ( ethylene carbonate, vinyline carbonate, diethyl carbonate) and a silicon compound additive; increase of internal resistance in storage at high temperature; stable power souce for hybrid or battery cars using electrical power; green energy DENSO CORPORATION (JP) 2007-10-18 US disclosed