SCHEMBL3340543

SCHEMBL3340543

CCO[SiH](OCC)C(C)CCc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.43
TSHR P16473 2/20 0.40
POLB P06746 1/20 0.39
LMNA P02545 1/20 0.39
MAPT P10636 1/20 0.39
MAPK1 P28482 1/20 0.39
ALDH1A1 P00352 1/20 0.38
CYP1A2 P05177 1/20 0.38
CYP2C9 P11712 1/20 0.38
CYP2C19 P33261 1/20 0.38
MEN1 O00255 1/20 0.38
HTT P42858 1/20 0.38
KMT2A Q03164 1/20 0.38
HPGD P15428 1/20 0.38
KDM4E B2RXH2 1/20 0.38
MCL1 Q07820 1/20 0.38
BCHE P06276 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1637621 0.87 SLC6A2 (0.41) SMN1; SMN2MAPT
SCHEMBL3338998 0.81 TSHR (0.42) SMN1; SMN2TSHRPOLBALDH1A1CYP1A2
SCHEMBL1501527 0.81 SIGMAR1 (0.45)
SCHEMBL3201225 0.72 MAPT (0.47) SMN1; SMN2MAPTALDH1A1CYP1A2CYP2C19
SCHEMBL17929078 0.72 SMN1; SMN2 (0.46) SMN1; SMN2TSHRPOLBLMNAMAPT
SCHEMBL115878 0.71 TAAR1 (0.40) POLBLMNAMEN1KMT2A
SCHEMBL16192536 0.70 MAPT (0.44) SMN1; SMN2MAPTALDH1A1HTTHPGD
SCHEMBL894528 0.70 SLC6A2 (0.60) SMN1; SMN2TSHRPOLB
SCHEMBL605244 0.70 SLC6A2 (0.60) SMN1; SMN2TSHRPOLB
SCHEMBL30913000 0.70 SLC6A2 (0.60) SMN1; SMN2TSHRPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed