Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2970652 | 0.76 | EPHX2 (0.30) | EPHX2 | |
| SCHEMBL2962840 | 0.76 | HMGCR (0.31) | EPHX2 | |
| SCHEMBL3336398 | 0.74 | — | — | |
| SCHEMBL3343968 | 0.71 | GRIN2D (0.30) | — | |
| SCHEMBL3344256 | 0.68 | — | — | |
| SCHEMBL11041473 | 0.67 | HTR1A (0.35) | — | |
| SCHEMBL156784 | 0.65 | ATAD2 (0.48) | — | |
| SCHEMBL1711830 | 0.64 | KDM4E (0.39) | — | |
| SCHEMBL7260781 | 0.64 | PRKCI (0.34) | EPHX2 | |
| SCHEMBL1691795 | 0.63 | KMT2A (0.55) | EPHX2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-9032906-B2 | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS, INC. (US) | 2015-05-19 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8491967-B2 | In-situ chamber treatment and deposition process | APPLIED MATERIALS, INC. (US) | 2013-07-23 | — | — | US | disclosed |
| CN-101448977-B | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC | 2010-12-15 | — | — | CN | disclosed |
| US-7850779-B2 | Apparatus and process for plasma-enhanced atomic layer deposition | Applied Materisals, Inc. (US) | 2010-12-14 | — | — | US | disclosed |
| WO-2010132172-A2 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-11-18 | — | — | WO | disclosed |
| US-7682946-B2 | flowing a process gas through a conduit to form a circular gas flow pattern, exposing a substrate to the circular gas flow pattern, pulsing a organoruthanium precursor into the process gas and igniting a plasma of ammonia, N2, H2 from the process gas to deposit a material on the substrate (Ru, Ta, W ) | APPLIED MATERIALS, INC. (US) | 2010-03-23 | — | — | US | disclosed |
| US-20100062614-A1 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. | 2010-03-11 | — | — | US | disclosed |
| WO-2010027669-A2 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2010-03-11 | — | — | WO | disclosed |
| CN-101448977-A | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC (US) | 2009-06-03 | — | — | CN | disclosed |
| US-20080268171-A1 | Plasma baffle assembly for receiving process gas within plasma-enhanced vapor deposition chamber | APPLIED MATERIALS, INC. | 2008-10-30 | — | — | US | disclosed |
| WO-2007142690-A2 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. (US) | 2007-12-13 | — | — | WO | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128863-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128862-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | disclosed |