SCHEMBL336090

SCHEMBL336090

C1=C(C2=CCCCCC2)CCCCC1.CC[Si](OC)(OC)OC

nearest known ligand 0.37

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
RAB9A P51151 2/20 0.37
NPC1 O15118 1/20 0.37
PSMB5 P28074 10/20 0.35
JAK2 O60674 2/20 0.33
JAK3 P52333 2/20 0.33
TDP1 Q9NUW8 1/20 0.33
ALDH1A1 P00352 2/20 0.32
PSMB1 P20618 2/20 0.32
PDGFRB P09619 1/20 0.32
PDGFRA P16234 1/20 0.32
CYP3A4 P08684 1/20 0.32
ELANE P08246 1/20 0.31
JAK1 P23458 1/20 0.30
CXCR3 P49682 1/20 0.30
PTPN11 Q06124 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL295858 0.84 ALDH1A1 (0.37) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL4325254 0.84 JAK2 (0.34) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL12980971 0.80 LMNA (0.41) RAB9ANPC1PSMB5ALDH1A1PDGFRB
SCHEMBL2103129 0.79 PSMB5 (0.37) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL295851 0.77 ALDH1A1 (0.37) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL21722723 0.76 NPC1 (0.39) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL296847 0.75 JAK2 (0.34) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL21722770 0.75 JAK2 (0.35) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL18244171 0.74 TYMP (0.41) RAB9ANPC1PSMB5JAK2JAK3
SCHEMBL21057468 0.74 TYMP (0.41) RAB9ANPC1PSMB5JAK2JAK3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US claimed
US-20240217211-A1 METAL-RESIN LAYERED BODY AND METHOD FOR MANUFACTURING METAL-RESIN LAYERED BODY RIMTEC CORPORATION (JP) 2024-07-04 US disclosed
EP-4331836-A1 METAL-RESIN LAYERED BODY AND METHOD FOR MANUFACTURING METAL-RESIN LAYERED BODY RIMTEC Corporation (JP) 2024-03-06 EP disclosed
US-11879029-B2 Polymerizable composition, cycloolefin-based polymer, and metal/resin composite RIMTEC CORPORATION (JP) 2024-01-23 US disclosed
US-20240002585-A1 CYCLOOLEFIN RESIN CURED PRODUCT RIMTEC CORPORATION (JP) 2024-01-04 US disclosed
US-20230322978-A1 CYCLOOLEFIN RESIN CURED PRODUCT HAVING OXYGEN BARRIER PROPERTIES RIMTEC CORPORATION (JP) 2023-10-12 US disclosed
EP-4257627-A1 POLYMERIZABLE COMPOSITION AND RESIN-IMPREGNATED SUPERCONDUCTING COIL RIMTEC Corporation (JP) 2023-10-11 EP disclosed
EP-4205968-A1 CYCLOOLEFIN RESIN CURED PRODUCT HAVING OXYGEN BARRIER PROPERTIES RIMTEC Corporation (JP) 2023-07-05 EP disclosed
EP-4190836-A1 CYCLOOLEFIN RESIN CURED PRODUCT RIMTEC Corporation (JP) 2023-06-07 EP disclosed
CN-115867591-A Cured product of cycloolefin resin RIMTEC株式会社 2023-03-28 CN disclosed
CN-101591772-B Process stability of nbde using substituted phenol stabilizers AIR PROD & CHEM 2012-07-04 CN disclosed
US-8097932-B2 Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-01-17 US disclosed
US-7674521-B2 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-03-09 US disclosed
US-20090297729-A1 MATERIALS CONTAINING VOIDS WITH VOID SIZE CONTROLLED ON THE NANOMETER SCALE INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-12-03 US disclosed
CN-101591772-A Use the processing stability of the phenol stabilizers improvement NBDE that replaces AIR PROD & CHEM (US) 2009-12-02 CN disclosed
US-20090146265-A1 ULTRA LOW k PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES USING A SINGLE BIFUNCTIONAL PRECURSOR CONTAINING BOTH A SiCOH MATRIX FUNCTIONALITY AND ORGANIC POROGEN FUNCTIONALITY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-06-11 US disclosed
US-7491658-B2 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-02-17 US disclosed
US-20070196639-A1 Materials containing voids with void size controlled on the nanometer scale INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-08-23 US disclosed
CN-1941359-A Porous composite material and method for making same IBM (US) 2007-04-04 CN disclosed
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US disclosed