SCHEMBL3394712

SCHEMBL3394712

C=C(C)C(=O)OC(=O)OC1(C)C2CC3CC(C2)CC1C3

nearest known ligand 0.37

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.37
CYP19A1 P11511 2/20 0.37
ALDH1A1 P00352 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL44331 0.88 CYP17A1 (0.40) CYP17A1CYP19A1ALDH1A1
SCHEMBL10027336 0.83 THRB (0.41) CYP17A1CYP19A1ALDH1A1
SCHEMBL27616990 0.82 ALDH1A1 (0.48) CYP17A1CYP19A1ALDH1A1
SCHEMBL5880684 0.82 CYP17A1 (0.44) CYP17A1CYP19A1
SCHEMBL953337 0.81 CYP17A1 (0.40) CYP17A1CYP19A1
SCHEMBL21235008 0.81 CYP17A1 (0.36) CYP17A1CYP19A1ALDH1A1
Methacrylic Acid SCHEMBL6296789 0.78 ALDH1A1 (0.44) CYP17A1CYP19A1ALDH1A1
SCHEMBL214191 0.78 CYP17A1 (0.42) CYP17A1CYP19A1ALDH1A1
SCHEMBL13900363 0.78 ALDH1A1 (0.39) CYP17A1CYP19A1ALDH1A1
SCHEMBL8398065 0.77 CYP17A1 (0.40) CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8507172-B2 Positive resist composition and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-20100040975-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2010-02-18 US disclosed
EP-2106573-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION Fujifilm Corporation (JP) 2009-10-07 EP disclosed
WO-2008093856-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2008-08-07 WO disclosed