Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL1960738 | 0.87 | — | — | |
| Water SCHEMBL27287895 | 0.75 | — | — | |
| Water SCHEMBL29247986 | 0.75 | — | — | |
| Water SCHEMBL29071099 | 0.75 | — | — | |
| Water SCHEMBL8939908 | 0.75 | — | — | |
| Water SCHEMBL2502590 | 0.75 | — | — | |
| Water SCHEMBL9510582 | 0.75 | — | — | |
| SCHEMBL237763 | 0.71 | — | — | |
| SCHEMBL28193931 | 0.71 | — | — | |
| SCHEMBL27845195 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117735593-A | Scandium aluminum magnesium oxide nano powder and preparation method thereof | 同济大学 | 2024-03-22 | — | — | CN | claimed |
| US-12588323-B2 | Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate | MIE UNIVERSITY (JP) | 2026-03-24 | — | — | US | disclosed |
| US-20250318325-A1 | NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE | MIE UNIVERSITY (JP) | 2025-10-09 | — | — | US | disclosed |
| CN-117735593-A | Scandium aluminum magnesium oxide nano powder and preparation method thereof | 同济大学 | 2024-03-22 | — | — | CN | disclosed |
| CN-117735593-A | Scandium aluminum magnesium oxide nano powder and preparation method thereof | 同济大学 | 2024-03-22 | — | — | CN | disclosed |
| CN-117735593-A | Scandium aluminum magnesium oxide nano powder and preparation method thereof | 同济大学 | 2024-03-22 | — | — | CN | disclosed |
| CN-116093156-A | Based on ScAlMgO 4 GaN epitaxial structure of substrate | 无锡吴越半导体有限公司 | 2023-05-09 | — | — | CN | disclosed |
| US-20230100683-A1 | NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE | MIE UNIVERSITY (JP) | 2023-03-30 | — | — | US | disclosed |
| EP-4112788-A1 | NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR SUBSTRATE | Mie University (JP) | 2023-01-04 | — | — | EP | disclosed |
| CN-115176049-A | Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate | 国立大学法人三重大学 | 2022-10-11 | — | — | CN | disclosed |
| EP-3769346-A1 | III-NITRIDE OPTOELECTRONIC DEVICES AND METHOD OF PRODUCTION | King Abdullah University of Science and Technology (SA) | 2021-01-27 | — | — | EP | disclosed |
| US-20210013374-A1 | III-NITRIDE OPTOELECTRONIC DEVICES AND METHOD OF PRODUCTION | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2021-01-14 | — | — | US | disclosed |
| EP-2175054-B1 | Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device | CANON KK (JP) | 2014-05-07 | — | — | EP | disclosed |
| US-8679650-B2 | Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device | CANON KABUSHIKI KAISHA (JP) | 2014-03-25 | — | — | US | disclosed |
| US-8268075-B2 | Method of producing zinc oxide semiconductor crystal | FUJIKURA LTD. (JP) | 2012-09-18 | — | — | US | disclosed |
| US-20100092800-A1 | SUBSTRATE FOR GROWING WURTZITE TYPE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME AND SEMICONDUCTOR DEVICE | CANON KABUSHIKI KAISHA (JP) | 2010-04-15 | — | — | US | disclosed |
| EP-2175054-A2 | Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device | Canon Kabushiki Kaisha (JP) | 2010-04-14 | — | — | EP | disclosed |
| US-20090260563-A1 | METHOD OF PRODUCING ZINC OXIDE SEMICONDUCTOR CRYSTAL | FUJIKURA LTD. (JP) | 2009-10-22 | — | — | US | disclosed |
| EP-2045838-A1 | METHOD FOR PRODUCING ZINC OXIDE SEMICONDUCTOR CRYSTAL | Fujikura, Ltd. (JP) | 2009-04-08 | — | — | EP | disclosed |
| JP-2007246354-A | METHOD FOR PRODUCING THIN FILM SUBSTRATE | JAPAN SCIENCE & TECHNOLOGY AGENCY | 2007-09-27 | — | — | JP | disclosed |