SCHEMBL3436068

SCHEMBL3436068

CCC(C)(C)c1cc(O)cc(O)c1

nearest known ligand 0.60

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GABRA1 P14867 1/20 0.50
GABRB2 P47870 1/20 0.50
BACE1 P56817 1/20 0.40
ESR1 P03372 7/20 0.39
ESR2 Q92731 6/20 0.39
NPC1 O15118 2/20 0.37
LMNA P02545 2/20 0.37
RAB9A P51151 2/20 0.37
MAPK1 P28482 1/20 0.37
CASP3 P42574 1/20 0.37
ATM Q13315 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
SENP8 Q96LD8 1/20 0.37
SENP7 Q9BQF6 1/20 0.37
SENP6 Q9GZR1 1/20 0.37
PTGS2 P35354 3/20 0.37
CYP3A4 P08684 2/20 0.37
SHBG P04278 1/20 0.37
AR P10275 1/20 0.35
CYP2C9 P11712 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3961791 0.95 GABRA1 (0.56) GABRA1GABRB2BACE1ESR1ESR2
SCHEMBL69216 0.81 GABRA1 (0.46) GABRA1GABRB2ESR1ESR2PTGS2
SCHEMBL780091 0.81 NPC1 (0.43) GABRA1GABRB2ESR1ESR2NPC1
SCHEMBL15506136 0.80 GABRA1 (0.50) GABRA1GABRB2BACE1ESR1ESR2
SCHEMBL5670811 0.80 GABRA1 (0.50) GABRA1GABRB2BACE1ESR1ESR2
SCHEMBL1538639 0.78 ESR1 (0.64) ESR1ESR2NPC1LMNARAB9A
SCHEMBL6356832 0.78 ESR1 (0.41) ESR1ESR2NPC1LMNARAB9A
SCHEMBL31215161 0.78 LMNA (0.44) ESR1ESR2NPC1LMNARAB9A
SCHEMBL825377 0.78 LMNA (0.44) ESR1ESR2NPC1LMNARAB9A
SCHEMBL4263013 0.78 CNR1 (0.50) ESR1ESR2PTGS2CYP3A4CNR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240219831-A1 PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-07-04 US disclosed
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-11-30 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-20230280652-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND METHOD FOR PRODUCING MONOMERIC COMPOUND JSR CORPORATION (JP) 2023-09-07 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-20230273519-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMATION METHOD JSR CORPORATION (JP) 2023-08-31 US disclosed
US-20230244143-A9 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND JSR CORPORATION (JP) 2023-08-03 US disclosed
US-11709428-B2 Radiation-sensitive resin composition, method for forming pattern, and method for producing monomeric compound JSR CORPORATION (JP) 2023-07-25 US disclosed
US-11693313-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-20180210338-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2018-07-26 US disclosed
US-20120094235-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-04-19 US disclosed
CN-1142971-C Flame retardant for resin and flame-retardant resin composition containing same ��Ԩ��ѧ��ҵ��ʽ���� 2004-03-24 CN disclosed
CN-1360615-A Flame retardant for resin and flame-retardant resin composition containing same DAIHACHI CHEM IND (JP) 2002-07-24 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11693313-B2 Resist composition and method of forming resist pattern C1R, C1S, C9 GABRA1 2761/4885GABRB2 2810/4885BACE1 1738/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 GABRA1 3138/4885GABRB2 2219/4885BACE1 4795/4885
US-20230384676-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING PATTERN, POLYMER, AND COMPOUND RER1, RFT1, RAD51 GABRA1 1024/4885GABRB2 3064/4885BACE1 3490/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.