SCHEMBL3459912

SCHEMBL3459912

C=CC=Cc1ccc(O)c2ccccc12

nearest known ligand 0.50

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 4/20 0.50
CTSL P07711 5/20 0.49
CAPN1 P07384 4/20 0.49
CTSB P07858 4/20 0.49
EP300 Q09472 2/20 0.41
KAT2B Q92831 2/20 0.41
KAT8 Q9H7Z6 2/20 0.41
HDAC3 O15379 1/20 0.41
NCOR2 Q9Y618 1/20 0.41
LDHA P00338 1/20 0.40
KDM4E B2RXH2 2/20 0.38
GCGR P47871 3/20 0.38
CDK4 P11802 1/20 0.37
CCND1 P24385 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3459911 1.00 IDO1 (0.50) IDO1CTSLCAPN1CTSBEP300
SCHEMBL501996 0.79 IDO1 (0.59) IDO1CTSLCAPN1CTSBEP300
SCHEMBL27558135 0.75 CDK4 (0.63) KDM4ECDK4CCND1
SCHEMBL19970163 0.75 CDK4 (0.63) KDM4ECDK4CCND1
SCHEMBL7708552 0.74 IDO1 (0.65) IDO1CTSLCAPN1CTSBEP300
SCHEMBL17066485 0.73 CTSL (0.46) IDO1CTSLCAPN1CTSBEP300
SCHEMBL490083 0.72 RXRA (0.50) KDM4E
SCHEMBL490085 0.72 RXRA (0.50) KDM4E
SCHEMBL30493441 0.72 RXRA (0.50) KDM4E
SCHEMBL16048249 0.72 CTSL (0.64) IDO1CTSLCAPN1CTSBHDAC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9989853-B2 2018-06-05 US disclosed
US-20160291472-A1 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN USING THE HARDMASK COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-10-06 US disclosed
US-20160282721-A1 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-09-29 US disclosed
US-20160011511-A1 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN USING THE HARDMASK COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2016-01-14 US disclosed
US-20160005625-A1 Hardmask composition and method of forming pattern using the hardmask composition SAMSUNG ELECTRONICS CO LTD (KR) 2016-01-07 US disclosed
US-7659051-B2 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2010-02-09 US disclosed
US-7659051-B2 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2010-02-09 US disclosed
US-7659051-B2 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2010-02-09 US disclosed
WO-2008082236-A1 POLYMER HAVING ANTIREFLECTIVE PROPERTIES, HARDMASK COMPOSITION INCLUDING THE SAME, AND PROCESS FOR FORMING A PATTERNED MATERIAL LAYER CHEIL INDUSTRIES INC. (KR) 2008-07-10 WO disclosed
US-20080160460-A1 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2008-07-03 US disclosed
US-20080160460-A1 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2008-07-03 US disclosed
US-20080160460-A1 Polymer having antireflective properties, hardmask composition including the same, and process for forming a patterned material layer CHEIL INDUSTRIES, INC. (KR) 2008-07-03 US disclosed