SCHEMBL3481561

SCHEMBL3481561

CCO[SiH](OCC)c1ccc(-c2ccccc2C)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
CA9 Q16790 1/20 0.41
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
NPC1 O15118 1/20 0.38
TP53 P04637 1/20 0.38
GAA P10253 1/20 0.38
MAPK1 P28482 1/20 0.38
RAB9A P51151 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
ENPP3 O14638 1/20 0.36
ENPP1 P22413 1/20 0.36
HTR7 P34969 2/20 0.35
HDAC8 Q9BY41 1/20 0.35
HDAC6 Q9UBN7 1/20 0.35
MCL1 Q07820 1/20 0.34
SLC1A3 P43003 1/20 0.34
SLC1A2 P43004 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481480 0.87 CA12 (0.39) CA12CA1CA2CA9PPARG
SCHEMBL3481949 0.80 CA12 (0.44) CA12CA1CA2CA9PPARG
SCHEMBL16487201 0.80 TAAR1 (0.40) NPC1TP53GAAMAPK1RAB9A
SCHEMBL676008 0.77 NQO1 (0.35)
SCHEMBL48956 0.75 LTA4H (0.37) TP53
SCHEMBL29551674 0.74 CA12 (0.61) CA12CA1CA2CA9PPARG
SCHEMBL3633054 0.74 CA12 (0.61) CA12CA1CA2CA9PPARG
SCHEMBL3482269 0.73 ACHE (0.38) CA1CA2CA9GAASMN1; SMN2
SCHEMBL14539085 0.73 NPC1 (0.61) CA12CA1CA2CA9PPARG
SCHEMBL3481556 0.72 SYK (0.38) NPC1TP53GAAMAPK1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed